8-51
R530/R730
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
C
CHECK
DEV. STEP
D
PROPRIETARY INFORMATION THAT IS
DAT
E
MODULE CODE
(4A
)
1
3
C
EXCEPT AS AUTHORIZED BY SAMSUNG
.
OCP : (10uA * R878) / Rds(on
)
PAGE
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHER
S
A
B
RdsOn : 32mohmMAX
OF
FOR EM
I
Misan,Maglayer
2
Vout = 0.75 * (1 + (Rtop / Rbot))
A
4
3
OCP : 6.25A@32mohm
TITLE
OCP : 7.69A@26mohm
ELECTRONICS
PART NO
.
350KHz
LAST EDIT
APPROVAL
DDR2 VTT(0.9V
)
Elna New($0.09)
OCP : Max 3A (25C)
OCP : Min 1.6A (125C)
SAMSUNG ELECTRONICS CO’S PROPERTY.
DRA
W
AP4232BGM NEW
Jun PARK
YM.AHN
HJ.KIM
undefined
9/23/2008
PV
1.0
October 27, 2009 14:27:43 PM
BA41-xxxxxA
51
59
Bremen-
L
PWR_MEMORY
DDR2 POWE
R
D:/users/mobile24/mentor/Bremen-L/PV/Bremen-L_MAI
N
SET : 1.802V
1
SAMSUN
G
D
THIS DOCUMENT CONTAINS CONFIDENTIA
L
RE
V
4
B
DDR2 Power
2
SAMSUNG PROPRIETAR
Y
MMBD4148 D15
75
V
1
3
6.3V
nostuf
f
9
PA
D
V
C
N
TL
6
VI
N
1
VOU
T
4
V
R
E
F
3
C265
10000nF-X5R
U19
APL5336KAITR
G
1203-006083
7V
GN
D
2
NC_
1
5
NC_
2
7
NC_
3
8
10
0n
F
25
V
C279
1000nF-X5R
6.3V
C272
1%
R
25
3
20
K
25
V
C
25
7
10
0n
F
nostuff
C
26
8
1n
F
50
V
SHORT50
7
INSTPA
R
G_DDR
RHU002N06 Q31
D
3
1
G
2
S
1% 10
R245
P1.8V_AUX
60
V
C
25
6
4700nF-X5R
25
V
P0.9V
G_DDR
G_DDR
RHU002N06 Q33
D
3
1
G
2
S
VDC
G_DD
R
60
V
1%
R
26
4
17.4
K
1%
R
26
3
12.4
K
nostuf
f
1% 10
0K
R880
R819
10K
1%
R250
100K
100K
R251
1%
P1.8V_AU
X
1%
44-C4,50-A4
55-B4,56-C4
PHASE
6
PO
K
10
PVC
C
15
THERMA
L
2
TON
13
UGAT
E
4
VCC
3
VOUT
1/10W
10
R881
APW7141QAITR
G
1203-006049
14
BOOT
1
EN
5
FB
7
GN
D
9
LGAT
E
11
OCSE
T
8
PGND
12
1%
5V
U2
0
P5.0V_ST
B
100K
R247
10
V
C
26
0
10
0n
F
44-B3,52-A4
53-C4,55-B2
P5.0V_AUX
14-D1,17-C
3
18
-C
3
10K R248
1%
G_DD
R
2703-00101
2
2.2uH L12
MS-RH1048S-L42
20
0K
R265
1%
0.1n
F
C
28
4
G_DD
R
50
V
10nF
C261
25
V
2.
2
R
25
7
P5.0V_ST
B
25V
C
26
9
4700nF-X5R
10nF
C
27
8
25
V
5
D1
D2
6
G
4
S
3
P5.0V_ST
B
7.6V
Q32-
2
AP4232BGM-H
F
0505-00258
1
G_DDR
1%
R260
10
K
6.3V
10000nF-X5
R
C271
C267
100nF
10V
nostuf
f
6.3V
C
10
17
1000nF-X5R
50
V
1n
F
C263
R
24
6
10
1%
EC16
68uF
25V
AL
2402-00114
4
S
1
P1.8V_AUX
P5.0V_AUX
CAN 6T 15mohm
EC17
330uF
2.5V
2409-00117
6
AP4232BGM-H
F
0505-00258
1
7
D1
D2
8
G
2
1% 10
K
R
81
6
7.6V
Q32-
1
DDR3VR_KBC3_PWRON_P0.75V_RCQ_M
N
ANS_DDR3VR_BG_MN
MEM1_VREF
PNS_DDR3VR_BST_RC_MN
PNS_DDR3VR_PHASE_RC_MN
KBC3_SUSPW
R
DDR3VR_VCC_M
N
DDR3VR_PGOOD_M
N
PNS_DDR3VR_BST_M
N
PNS_DDR3VR_PHASE_M
N
DDR3VR_TON_M
N
PNS_DDR3VR_TG_M
N
DDR3VR_TRIP_MN
DDR3VR_VREF_P0.7V_M
N
DDR3VR_P5.0V_ALW_VREF_RQ_M
N
KBC3_PWRON
DDR3VR_VFB_M
N
DDR3VR_EN_PSV_M
N
Summary of Contents for R530
Page 5: ...iii Contents This Document can not be used without Samsung s authorization R530 R730...
Page 64: ...6 40 6 Material List This Document can not be used without Samsung s authorization R530 R730...
Page 240: ...4 23 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...
Page 241: ...4 24 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...
Page 249: ...4 32 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...