Rev. 1.00, 05/04, page 527 of 544
22.5
Flash Memory Characteristics
Table 22.12 shows the flash memory characteristics.
Table 22.12 Flash Memory Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, V
SS
= 0 V, T
a
= –20 to +75°C
Item Symbol
Min.
Typ.
Max.
Unit
Test
Condition
Programming time
*
1
,
*
2
,
*
4
t
P
—
10
200
ms/
128
bytes
Erase time
*
1
,
*
3
,
*
6
t
E
—
100
1200
ms/
block
Reprogramming count
N
WEC
— — 100
times
Wait time after
SWE-bit setting
*
1
x 1 —
—
µs
Wait time after
PSU-bit setting
*
1
y 50
—
—
µs
z1 28 30 32 µs 1
≤
n
≤
6
z2 198 200 202 µs 7
≤
n
≤
1000
Wait time after
P-bit setting
*
1
,
*
4
z3 8 10 12 µs Additional
write
Wait time after
P-bit clear
*
1
α
5 —
—
µs
Wait time after
PSU-bit clear
*
1
β
5 —
—
µs
Wait time after
PV-bit setting
*
1
γ
4 —
—
µs
Wait time after
dummy write
*
1
ε
2 —
—
µs
Wait time after
PV-bit clear
*
1
η
2 —
—
µs
Wait time after
SWE-bit clear
*
1
θ
100 — — µs
Programming
Maximum
programming
count
*
1
,
*
4
,
*
5
N — — 1000
times
Summary of Contents for H8S/2111B
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