66
6174B–ATARM–07-Nov-05
AT91FR40162S Preliminary
11.11 Common Flash Interface Definition
Table 11-5.
Common Flash Interface Definition
Address
[x16 Mode]
Address
[x8 Mode]
Data
Comments
10h
20h
0051h
“Q”
11h
22h
0052h
“R”
12h
24h
0059h
“Y”
13h
26h
0002h
14h
28h
0000h
15h
2Ah
0041h
16h
2Ch
0000h
17h
2Eh
0000h
18h
30h
0000h
19h
32h
0000h
1Ah
34h
0000h
1Bh
36h
0027h
V
CC
min write/erase
1Ch
38h
0036h
V
CC
max write/erase
1Dh
3Ah
00B5h
V
PP
min voltage
1Eh
3Ch
00C5h
V
PP
max voltage
1Fh
3Eh
0004h
Typ word write – 12 µs
20h
40h
0000h
21h
42h
000Ah
Typ block erase: 1,000 ms
22h
44h
0010h
Typ chip erase: 25,000 ms
23h
46h
0004h
Max word write/typ time
24h
48h
0000h
N/A
25h
4Ah
0002h
Max block erase/typ block erase
26h
4Ch
0002h
Max chip erase/typ chip erase
27h
4Eh
0015h
Device size
28h
50h
0002h
x8/x16 device
29h
52h
0000h
x8/x16 device
2Ah
54h
0000h
Multiple byte write not supported
2Bh
56h
0000h
Multiple byte write not supported
2Ch
58h
0002h
2 regions, X = 2
2Dh
5Ah
001Eh
64K bytes, Y = 30
2Eh
5Ch
0000h
64K bytes, Y = 30
2Fh
5Eh
0000h
64K bytes, Z = 256
30h
60h
0001h
64K bytes, Z = 256
31h
62h
0007h
8K bytes, Y = 7
32h
64h
0000h
8K bytes, Y = 7
33h
66h
0020h
8K bytes, Z = 32
34h
68h
0000h
8K bytes, Z = 32