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Chapter 30 Flash Memory
MPC5606BK Microcontroller Reference Manual, Rev. 2
Freescale Semiconductor
797
After reset is negated, read register access may be done
,
although it should be noted that registers that
require updating from shadow information, or other inputs, may not read updated values until the DONE
field (in CFLASH_MCR or DFLASH_MCR) transitions. The DONE field may be polled to determine if
the flash memory module has transitioned out of reset. Notice that the registers cannot be written until the
DONE field is high.
30.4.7
Power-down mode
All flash memory DC current sources can be turned off in power-down mode, so that all power dissipation
is due only to leakage in this mode. Flash memory power-down mode can be selected at
ME_
<mode>
_MC.
Reads from or writes to the module are not possible in power-down mode.
When enabled the flash memory module returns to its pre-disable state in all cases unless in the process of
executing an erase high voltage operation at the time of disable.
If the flash memory module is disabled during an erase operation, MCR[ESUS] bit is programmed to 1.
The user may resume the erase operation at the time the module is enabled by programming
MCR[ESUS] = 0. MCR[EHV] must be high to resume the erase operation.
If the flash memory module is disabled during a program operation, the operation will in any case be
completed and the power-down mode will be entered only after the programming ends.
The user should realize that, if the flash memory module is put in power-down mode and the interrupt
vectors remain mapped in the flash memory address space, the flash memory module will greatly increase
the interrupt response time by adding several wait-states.
It is forbidden to enter in low power mode when the power-down mode is active.
30.4.8
Low power mode
The low power mode turns off most of the DC current sources within the flash memory module. Flash
memory low power mode can be selected at ME_
<mode>
_MC.
The module (flash memory core and registers) is not accessible for read or write once it enters low power
mode.
Wake-up time from low power mode is faster than wake-up time from power-down mode.
When exiting from low power mode the flash memory module returns to its pre-sleep state in all cases
unless it is executing an erase high voltage operation at the time low power mode is entered.
If the flash memory module enters low power mode during an erase operation, MCR[ESUS] is
programmed to 1. The user may resume the erase operation at the time the module exits low power mode
by programming MCR[ESUS] = 0. MCR[EHV] must be high to resume the erase operation.
If the flash memory module enters low power mode during a program operation, the operation will be in
any case completed and the low power mode will be entered only after the programming end.
It is forbidden to enter power-down mode when the low power mode is active.
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