Chapter 30 Flash Memory
MPC5606BK Microcontroller Reference Manual, Rev. 2
790
Freescale Semiconductor
•
Blocks (also called sectors) of single transistor storage elements
•
An electrical means for selectively adding (programming) and removing (erasing) charge from
these elements
•
A means of selectively sensing (reading) the charge stored in these elements
The flash memory module is arranged as two functional units:
•
The flash memory core
•
The memory interface
The flash memory core is composed of arrayed nonvolatile storage elements, sense amplifiers, row
decoders, column decoders, and charge pumps. The arrayed storage elements in the flash memory core are
subdivided into physically separate units referred to as blocks (or sectors).
The memory interface contains the registers and logic that control the operation of the flash memory core.
The memory interface is also the interface between the flash memory module and a platform flash memory
controller. It contains the ECC logic and redundancy logic.
A platform flash memory controller connects the flash memory module to a system bus, and contains all
system level customization required for the device application.
30.2
Main features
30.3
Block diagram
The flash memory module contains one Matrix Module, composed of a single bank (Bank 0) normally
used for code storage. RWW operations are not possible.
Table 30-1. Flash memory features
Feature
CFlash
DFlash
High read parallelism (128 bits)
Yes
Error Correction Code (SEC-DED) to enhance data retention
Yes
Double word program (64 bits)
Yes
Sector erase
Yes
Single bank—Read-While-Write (RWW)
No
Erase suspend
Yes
Program suspend
No
Software programmable program/erase protection to avoid unwanted
writings
Yes
Censored mode against piracy
Yes
Shadow sector available
Yes
No
One-Time Programmable (OTP) area in Test Flash block
Yes
Boot sectors
Yes
No
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