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Chapter 30 Flash Memory
MPC5606BK Microcontroller Reference Manual, Rev. 2
Freescale Semiconductor
791
Modify operations are managed by an embedded Flash Memory Program/Erase Controller (FPEC).
Commands to the FPEC are given through a user registers interface.
The read data bus is 128 bits wide, while the flash memory registers are on a separate bus 32 bits wide
addressed in the user memory map.
The high voltages needed for program/erase operations are generated internally.
Figure 30-2. CFlash and DFlash module structures
30.4
Functional description
30.4.1
Module structure
The flash memory module is addressable by double word (64 bits) for program, and page (128 bits) for
read. Reads to the flash memory always return 128 bits, although read page buffering may be done in the
platform flash memory controller.
Each read of the flash memory module retrieves a page, or four consecutive words (128 bits) of
information. The address for each word retrieved within a page differs from the other addresses in the page
only by address bits (3:2).
The flash memory module supports fault tolerance through Error Correction Code (ECC) or error
detection, or both. The ECC implemented within the flash memory module will correct single bit failures
and detect double bit failures.
CFlash structure
64 KB:
+ 16 KB TestFlash
HV generator
Flash memory
Controller
Flash memory
Matrix
Register
Program/Erase
registers
interface
Flash memory
interface
bank 1
DFlash structure
4 × 16 KB
HV generator
Flash memory
Controller
Flash memory
Matrix
Register
Program/Erase
registers
interface
interface
512 KB:
+ 16 KB TestFlash
Module 0
+ 16 KB Shadow
32 KB
2 × 16 KB
2 × 32 KB
3 × 128 KB
512 KB:
Module 1
4 x 128 KB
Содержание MPC5605BK
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