Keysight PD1000A, Руководство для стартапов

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PD1000A Power Device Measurement System for Advanced Modeling
Startup Guide
99
B Glossary
Typical capacitance parameters of power devices are not always the same as the
physical parameters of the device terminal capacitances (C
gd
, C
gs
, C
ds
as an
example) as shown next. It requires some interpretation to convert them to the
data sheet parameters. For example, C
iss
is sum of C
gd
and C
gs
device terminal
capacitances.
Power FET Capacitance
Device terminal capacitance:
– C
gs
: Gate to source capacitance
– C
gd
: Gate to drain capacitance
– C
ds
: Drain to source capacitance
Capacitance parameter described in device data
sheet:
–
C
iss
: Input capacitance
–
C
oss
: Output capacitance
–
C
rss
: Reverse transfer capacitance
IGBT Capacitance
Device terminal capacitance:
– C
ge
: Gate to emitter capacitance
– C
gc
: Gate to collector capacitance
– C
ce
: Drain to emitter capacitance
Capacitance parameter described in device data
sheet:
–
C
ies
: Input capacitance
–
C
oes
: Output capacitance
–
C
res
: Reverse transfer capacitance