88
SLAS826F – MARCH 2015 – REVISED MARCH 2017
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Specifications
Copyright © 2015–2017, Texas Instruments Incorporated
lists the characteristics of the flash stand-alone operations.
Table 5-46. Flash Stand-Alone Operations
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
PGM, Immediate
Program time for one 32-bit data using
immediate write mode
VER_PRE = 0, VER_PST = 1
40
µs
VER_PRE = 1, VER_PST = 1
60
t
PGM, Full-word
Program time for one 128-bit word using full
word write mode
VER_PRE = 0, VER_PST = 1
40
µs
VER_PRE = 1, VER_PST = 1
60
t
PGM, Burst
Program time for 4×128-bit burst using burst
write mode
AUTO_PRE = 0, AUTO_PST = 1
65
µs
AUTO_PRE = 1, AUTO_PST = 1
85
t
ERS
Time for sector erase or mass erase
9
ms
N
MAX_PGM
Maximum number of pulses to complete
program operation
5
N
MAX_ERS
Maximum number of pulses to complete
erase operation
Number of erase or program cycles
<1k
34
Number of erase or program cycles
>1k and <20k
334
lists the characteristics of the SRAM.
Table 5-47. SRAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
SRAM_EN
Current consumption of one SRAM bank when enabled
VCORE = 1.2 V
100
3500
nA
VCORE = 1.4 V
300
5500
I
SRAM_RET
Current consumption of one SRAM bank under retention
VCORE = 1.2 V
30
1250
nA
VCORE = 1.4 V
35
1200
t
SRAM_EN, one
Time taken to enable one SRAM bank
4
5
µs
t
SRAM_DIS, one
Time taken to disable one SRAM bank
4
5
µs
t
SRAM_EN, all
Time taken to enable all SRAM banks except Bank 0
7
8
µs
t
SRAM_DIS, all
Time taken to disable all SRAM banks except Bank 0
4
5
µs