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SLAS826F – MARCH 2015 – REVISED MARCH 2017
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Specifications
Copyright © 2015–2017, Texas Instruments Incorporated
(1)
Violation of the maximum frequency limitation for a given wait-state configuration results in nondeterministic data or instruction fetches
from the flash memory.
(2)
In low-frequency active modes, the flash can always be accessed with zero wait states, because the maximum MCLK frequency is
limited to 128 kHz.
(3)
Other read modes refers to Read Margin 0, Read Margin 1, Program Verify, and Erase Verify.
5.8
Operating Mode Execution Frequency vs Flash Wait-State Requirements
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
NUMBER OF
FLASH WAIT
STATES
FLASH READ
MODE
MAXIMUM SUPPORTED MCLK FREQUENCY
(1) (2)
UNIT
AM_LDO_VCORE0,
AM_DCDC_VCORE0
AM_LDO_VCORE1,
AM_DCDC_VCORE1
f
MAX_NRM_FLWAIT0
0
Normal read
mode
16
24
MHz
f
MAX_NRM_FLWAIT1
1
Normal read
mode
24
48
MHz
f
MAX_ORM_FLWAIT0
0
Other read
modes
(3)
8
12
MHz
f
MAX_ORM_FLWAIT1
1
Other read
modes
(3)
16
24
MHz
f
MAX_ORM_FLWAIT2
2
Other read
modes
(3)
24
36
MHz
f
MAX_ORM_FLWAIT3
3
Other read
modes
(3)
24
48
MHz
(1)
Device held in reset through RSTn/NMI pin.
(2)
Current measured into V
CC
.
(3)
All other input pins tied to 0 V or V
CC
. Outputs do not source or sync any current.
5.9
Current Consumption During Device Reset
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
(1) (2) (3)
PARAMETER
V
CC
MIN
TYP
MAX
UNIT
I
RESET
Current during device reset
2.2 V
510
µA
3.0 V
600
850
(1)
MCLK sourced by DCO.
(2)
Current measured into V
CC
.
(3)
All other input pins tied to 0 V or V
CC
. Outputs do not source or sync any current.
(4)
All SRAM banks kept active.
(5)
All peripherals are inactive.
(6)
Device executing the Dhrystone 2.1 program. Code execution from flash. Stack and data in SRAM.
(7)
Flash configured to minimum wait states required to support operation at given frequency and core voltage level.
(8)
Flash instruction and data buffers are enabled (BUFI = BUFD = 1).
(9)
Device executing the Dhrystone 2.1 program. Code execution from SRAM. Stack and data in SRAM.
5.10 Current Consumption in LDO-Based Active Modes – Dhrystone 2.1 Program
over recommended operating free-air temperature (unless otherwise noted)
(1) (2) (3) (4) (5)
PARAMETER
EXECUTION
MEMORY
V
CC
MCLK = 1 MHz
MCLK = 8 MHz
MCLK =
16 MHz
MCLK =
24 MHz
MCLK =
32 MHz
MCLK =
40 MHz
MCLK =
48 MHz
UNIT
TYP
MAX
TYP
MAX
TYP
MAX
TYP
MAX
TYP
MAX
TYP
MAX
TYP
MAX
I
AM_LDO_VCORE0,Flash
(6) (7) (8)
Flash
3.0 V
490
625
1500
1700
2650
2950
3580
3900
µA
I
AM_LDO_VCORE1,Flash
(6) (7) (8)
Flash
3.0 V
510
685
1650
1900
2970
3300
4260
4700
5300
5800
6500
7100
7700
8400
µA
I
AM_LDO_VCORE0,SRAM
(9)
SRAM
3.0 V
435
565
1070
1240
1800
2010
2530
2800
µA
I
AM_LDO_VCORE1,SRAM
(9)
SRAM
3.0 V
450
620
1160
1370
1980
2250
2800
3120
3650
4020
4470
4900
5280
5760
µA