Main Memory
Reserved
Information Memory
Reserved
0x0000_0000
0x0004_0000
0x0020_0000
0x0020_4000
0x003F_FFFF
112
SLAS826F – MARCH 2015 – REVISED MARCH 2017
Product Folder Links:
Detailed Description
Copyright © 2015–2017, Texas Instruments Incorporated
Figure 6-5. Flash Memory Map
6.4.1.1
Flash Main Memory (0x0000_0000 to 0x0003_FFFF)
The flash main memory on MSP432P401x MCUs can be up to 256KB. Flash main memory consists of up
to 64 sectors of 4KB each, with a minimum erase granularity of 4KB (1 sector). The main memory can be
viewed as two independent identical banks of up to 128KB each, allowing simultaneous read or execute
from one bank while the other bank is undergoing a program or erase operation.
6.4.1.2
Flash Information Memory (0x0020_0000 to 0x0020_3FFF)
The flash information memory region is 16KB. Flash information memory consists of four sectors of 4KB
each, with a minimum erase granularity of 4KB (1 sector).
describes different regions of flash
information memory and the contents of each of the regions. The flash information memory region that
contains the device descriptor (TLV) is factory configured for protection against write and erase
operations.
Table 6-35. Flash Information Memory Regions
REGION
ADDRESS RANGE
CONTENTS
WRITE AND ERASE
PROTECTED?
Bank 0, Sector 0
0x0020_0000–0x0020_0FFF
Flash Boot-override Mailbox
No
Bank 0, Sector 1
0x0020_1000–0x0020_1FFF
Device Descriptor (TLV)
Yes
Bank 1, Sector 0
0x0020_2000–0x0020_2FFF
TI BSL
No
Bank 1, Sector 1
0x0020_3000–0x0020_3FFF
TI BSL
No
6.4.1.3
Flash Operation
The flash memory provides multiple read and program modes of operation that the application can deploy.
Up to 128 bits (memory word width) can be programmed (set from 1 to 0) in a single program operation.
Although the CPU data buses are 32 bits wide, the flash can buffer 128-bit write data before initiating flash
programming, thereby making it more seamless and power efficient for software to program large blocks
of data at a time. In addition, the flash memory also supports a burst write mode that takes less time when
compared to programming words individually. See for information on timing parameters.
The flash main and information memory regions offer write/erase protection control at a sector granularity
to enable software to optimize operations like mass erase while protecting certain regions of the flash. In
low-power modes of operation, the flash memory is disabled and put in a power-down state to minimize
leakage.