SRAM Region
Reserved
0x0100_0000
0x0101_0000
0x010F_FFFF
SRAM Region
0x2000_0000
0x2001_0000
Reserved
0x2220_0000
SRAM
Bit-Band Alias
Region
Reserved
0x3FFF_FFFF
0x2200_0000
CODE Zone
SRAM Zone
113
SLAS826F – MARCH 2015 – REVISED MARCH 2017
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Detailed Description
Copyright © 2015–2017, Texas Instruments Incorporated
For details on the flash memory and its various modes of operation and configuration, see the
Flash
Controller (FLCTL)
chapter in the
MSP432P4xx SimpleLink™ Microcontrollers Technical Reference
.
NOTE
Depending on the CPU (MCLK) frequency and the active mode in use, the flash may need to
be accessed with single/multiple wait states. Whenever there is a change required in the
operating frequency, it is the responsibility of the application to ensure that the flash access
wait states are configured correctly before the frequency change is effected. See the
electrical specification for details on flash wait state requirements.
6.4.2
SRAM
The MSP432P401x MCUs support up to 64KB of SRAM, with the rest of the 1MB SRAM region reserved.
The SRAM is aliased in both Code and SRAM zones. This enables fast single-cycle execution of code
from the SRAM, as the Cortex-M4 processor pipelines instruction fetches to memory zones other than the
Code space. As with the flash memory, the SRAM can be powered down or placed in a low-leakage
retention state in low-power modes of operation.
shows the memory map of SRAM on MSP432P401x MCUs.
Figure 6-6. SRAM Map
6.4.2.1
SRAM Bank Enable Configuration
The application can optimize the power consumption of the SRAM. To enable this, the SRAM is divided
into 8-KB banks that can be individually powered down. Banks that are powered down remain powered
down in both active and low-power modes of operation, thereby limiting any unnecessary inrush current
when the device transitions between active and retention-based low-power modes. The application can
also disable one (or more) banks for a certain stage in the processing and enable it for another stage.