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CHAPTER 17 ONE-TIME PROM WRITING/VERIFYING
182
Figure 17-1. Procedure of program Memory Writing
17.4 READING PROCEDURE OF PROGRAM MEMORY
(1)
Pull down the unused pins to GND. (X
OUT
pin is open.) Make the CLK pin low.
(2)
Apply 5 V to the V
DD
pin. Make V
PP
pin low.
(3)
Wait for 10
µ
s. Then, apply 5 V to V
PP
pin.
(4)
Set the program memory address 0 clear mode using mode selector pins.
(5)
Apply 6 V to V
DD
and 12.5 V to V
PP
.
(6)
Set mode selector pins to the program inhibit mode.
(7)
Set the verify mode. When clock pulses are input to the CLK pin, data for each address can be sequentially
output with four clocks as one cycle.
(8)
Set the program inhibit mode.
(9)
Set the program memory address 0 clear mode.
(10) Change the voltage of V
DD
and V
PP
pins to 5 V.
(11) Turn off the power.
Repeat
×
times
Write
Verify
Additional
writing
Address
increment
Reset
V
DD
+1
V
DD
GND
V
DD
V
PP
V
DD
GND
V
PP
CLK
D
0–
D
7
MD
0
MD
1
MD
2
MD
3
Hi-Z
Input data
Output data
Input data
Hi-Z
Hi-Z
Hi-Z
Summary of Contents for mPD17120 Subseries
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