CHAPTER 17 ONE-TIME PROM WRITING/VERIFYING
181
17.3 WRITING PROCEDURE OF PROGRAM MEMORY
The program memory can be written at high speeds in the following procedure.
(1)
Pull down the unused pins to GND. (X
OUT
pin is open.) Mask the CLK pin low.
(2)
Apply 5 V to the V
DD
pin. Make V
PP
pin low.
(3)
Wait for 10
µ
s. Then, apply 5 V to V
PP
pin.
(4)
Set the program memory address 0 clear mode using mode selector pins.
(5)
Apply 6 V to V
DD
and 12.5 V to V
PP
.
(6)
Set the program inhibit mode.
(7)
Write data in mode for 1 ms writing.
(8)
Set the program inhibit mode.
(9)
Set the verify mode (MD
0
-MD
3
=LLHH). If the program has been correctly written, proceed to (10).
If not, repeat (7) through (9).
(10) Additional writing of (number of times (
×
) the program has been written in (7) through (9))
×
1ms.
(11) Set the program inhibit mode.
(12) Input four pulses to the CLK pin to update the program memory address by one.
(13) Repeat (7) through (12) until the last address in programmed.
(14) Set the program memory address 0 clear mode.
(15) Change the voltage of V
DD
and V
PP
pins to 5 V.
(16) Turn off the power.
Figure 17-1 shows the procedures of (2) through (12).
Summary of Contents for mPD17120 Subseries
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