A.C. Characteristics for EEPROM Memory
Ta=25
°
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
Conditions
f
SYS
System Clock
3V
¾
5.7
6
6.3
MHz
t
RCSYS
Watchdog OSC Period
3V
¾
¾
71
¾
m
s
t
WDT1
Watchdog Time-out Period with
6-stage Prescaler
3V
WDTS=1
¾
4.57
¾
ms
t
RES
External Reset Low Pulse Width
¾
¾
1
¾
¾
ms
t
SST
System Start-up Timer
¾
¾
¾
512
¾
1/f
SYS
t
LVR
Low Voltage Width to Reset
¾
¾
0.25
1
2
ms
t
Wake-up
MCU Wake-up Timer
¾
¾
¾
¾
1
ms
t
configure
Watchdog Time-out Period
¾
¾
¾
1024
¾
t
RCSYS
Power-On Reset Characteristics
Ta=25
°
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
Conditions
I
POR
Operating current
1.8V~
3.3V
¾
¾
1.0
¾
m
A
RR
VDD
V
DD
Rise Rate to Ensure
Power-on Reset
¾
Without 0.1
m
F between
V
DD
and V
SS
0.05
¾
¾
V/ms
V
POR
Maximum V
DD
Start Voltage to
Ensure Power-on Reset
¾
Without 0.1
m
F between
V
DD
and V
SS
,Ta=25
°
C
0.9
¾
1.5
V
t
POR
Power-on Reset Low Pulse
Width
¾
Without 0.1
m
F between
V
DD
and V
SS
2
¾
¾
m
s
With 0.1
m
F between
V
DD
and V
SS
10
¾
¾
m
s
HT82M75REW/HT82K75REW
Rev. 1.00
7
June 11, 2010
T i m e
V
D D
V
P O R
R R
V D D
t
P O R
electronic components distributor