D.C. Characteristics for EEPROM Memory
Ta=
-
40
°
C~85
°
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CC
Conditions
I
CC1
*
Operating Current
3V
Read at 100kHz
¾
¾
1
mA
I
CC2
*
Operating Current
3V
Write at 100kHz
¾
¾
3
mA
I
STB*
Standby Current
3V
V
IN
=0 or V
CC
¾
¾
3
m
A
Note:
²
*
²
The operating current ICC1 and ICC2 listed here are the additional currents consumed when the EEPROM
Memory operates in Read Operation and Write Operation respectively. If the EEPROM is operating, the ICC1
or ICC2 should be added to calculate the relevant operating current of the device for different conditions. To
calculate the standby current for the whole device, the standby current shown above should also be taken into
account.
A.C. Characteristics
Ta=
-
40
°
C~85
°
C
Symbol
Parameter
Remark
Standard Mode*
Unit
Min.
Max.
f
SK
SCL Clock Frequency
¾
¾
100
kHz
t
HIGH
Clock High Time
¾
4000
¾
ns
t
LOW
Clock Low Time
¾
4700
¾
ns
t
r
SDA and SCL Rise Time
Note
¾
1000
ns
t
f
SDA and SCL Fall Time
Note
¾
300
ns
t
HD:STA
START Condition Hold Time
After this period the first clock
pulse is generated
4000
¾
ns
t
SU:STA
START Condition Setup Time
Only relevant for repeated START
condition
4000
¾
ns
t
HD:DAT
Data Input Hold Time
¾
0
¾
ns
t
SU:DAT
Data Input Setup Time
¾
200
¾
ns
t
SU:STO
STOP Condition Setup Time
¾
4000
¾
ns
t
AA
Output Valid from Clock
¾
¾
3500
ns
t
BUF
Bus Free Time
Time in which the bus must be free
before a new transmission can start
4700
¾
ns
t
SP
Input Filter Time Constant
(SDA and SCL Pins)
Noise suppression time
¾
100
ns
t
WR
Write Cycle Time
¾
¾
5
ms
Note:
These parameters are periodically sampled but not 100% tested
* The standard mode means V
CC
=2.2V to 3.6V
For relative timing, refer to timing diagrams
HT82M75REW/HT82K75REW
Rev. 1.00
6
June 11, 2010
electronic components distributor
