PROCESS DESCRIPTION
P
ROCESS
M
ANUAL
4.1-3
TS630x 100
150
30 250 1000 800 20 60
TS660x 100
150
30 250 1000 800 30 90
TS680x 100
150
30 250 1000 800 40 120
TS6100x 100
150
30 250 1000 800 50 150
TS840x 150
200
30 250 1000 800 50 150
TS860x 150
200
30 250 1000 800 60 180
TS8100x 150
200
30 250 1000 800
100
300
TS1280x 200
300
30 200 1000 800
150
450
4.1.5
Recommended cleaning interval
Cleaning interval for the several components after cumulative deposition in microns on the
wafers.
Tube
Cassettes
/
baffles
SiC paddle
Trap (upstream
tubing)
Oil and filter
change
Nitride
4 2 4 2 10
