PROCESS SETUP AND ACCEPTANCE
P
ROCESS
M
ANUAL
3.4-5
base: bare Si wafer
testmethod: ellipsometer
Atm-06 Pyrogenic oxi liquid cleaning
Equipment: Tempress Systems, Inc. external torch
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
Atm-07 reserved
Atm-08 POCl
3
diffusion
Test sheet resistivity: 8 or 30 ohm/square
test temperature: 900
o
C deposition - 1000 drive-in
o
C
time indication: 30 min – 30 min
base: bare Si wafer
testmethod: four-point probe
Atm-09 reserved
Atm-10 reserved
Atm-11 reserved
Atm-12 Wet oxidation H
2
O bubbler
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
Atm-13 Wet oxidation H
2
O injection
Equipment: Tempress Systems, Inc. water injection
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
