PROCESS SETUP AND ACCEPTANCE
P
ROCESS
M
ANUAL
3.4-4
3.4.2
Default process test conditions
3.4.2.1 Test material requirements
Bare Si wafers are prime wafers, single or double side mirror polished and according to SEMI
standard M1-0298.
Standard film thickness, sheet resistivity and/or dopant concentration as indicated in this section
apply unless otherwise stated in the customer specific process specifications.
3.4.2.2 Tempress Systems, Inc. Atmospheric processes
Atm-01 Anneal
Test: temperature overshoot and stability
Atm-02 Metalalloy anneal
Test: temperature overshoot and stability
Atm-03 Dry oxidation
test thickness: 500Å
test temperature: 1000
o
C
time indication: 60 min
base: bare Si wafer
testmethod: ellipsometer
Atm-04 Dry oxi liquid cleaning
test thickness: 500Å
test temperature: 1000
o
C
time indication: 60 min
base: bare Si wafer
testmethod: ellipsometer
Atm-04s Thin gate oxiAtmoscan®
test thickness: 500Å
test temperature: 1000
o
C
time indication: 60 min
base: bare Si wafer
testmethod: ellipsometer
Atm-05 Pyrogenic oxidation
Equipment: Tempress Systems, Inc. external torch
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
