ADV
ANCEINFORMA
TION
TMS320F28377S, TMS320F28376S, TMS320F28375S, TMS320F28374S
SPRS881A – AUGUST 2014 – REVISED JUNE 2015
5.7.4
Flash Parameters
Table 5-18. Minimum Required Flash Wait States at
Different Frequencies
FLASH WAIT STATES
CPUCLK (MHz)
(MINIMUM REQUIRED RWAIT)
151–200
3
101–150
2
51–100
1
≤
50
0
Table 5-19. Flash Parameters at 200 MHz
(1)
PARAMETER
MIN
TYP
MAX
UNIT
Program Time
(2)
128 data bits + 16 ECC bits
40
300
µs
8KW sector
90
180
ms
32KW sector
360
720
ms
Erase Time
(3)
8KW sector
25
50
ms
at < 25 cycles
32KW sector
30
55
Erase Time
(3)
8KW sector
105
4000
ms
at 50k cycles
32KW sector
110
4000
(1)
The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required
prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent
programming operations.
(2)
Program time includes overhead of the Flash state machine but does not include the time to transfer the following into RAM:
•
Code that uses Flash API to program the Flash
•
Flash API itself
•
Flash data to be programmed
In other words, the time indicated in this table is applicable after all the required code/data is available in the device RAM, ready for
programming. Note that the transfer time will significantly vary depending on the speed of the emulator used.
Program time calculation is based on programming 144 bits at a time at the specified operating frequency. Program time includes
Program verify by the CPU. Note that the program time does not degrade with write/erase (W/E) cycling, but the erase time does.
Erase time includes Erase verify by the CPU and does not involve any data transfer.
(3)
Erase time includes Erase verify by the CPU.
Table 5-20. Flash/OTP Endurance
MIN
TYP
MAX
UNIT
N
f
Flash endurance for the array (write/erase cycles)
20000
50000
cycles
N
OTP
OTP endurance for the array (write cycles)
1
write
Table 5-21. Flash Data Retention Duration
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
t
retention
Data retention duration
T
J
= 85°C
20
years
Copyright © 2014–2015, Texas Instruments Incorporated
Specifications
67
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