o f applied voltages, th e screen (target) operates in the co n
ve n tio n a l m o d e , s im ila r to a c o n v e n tio n a l cathode ray tu b e .
Circuit Description—434
The storage screens co n ta in a special coated surface
w h ic h c o n tin u e s to e m it lig h t w hen bom barded b y the
flo o d gun electrons, provided the surface has been w ritte n
b y the w ritin g gun beam and s h ifte d to the stored state.
The tw o targets are e le c tric a lly isolated fro m each o th e r,
w h ic h allow s sim ultaneous presentations o f stored in fo rm a
tio n on one h a lf and non-store (co n v e n tio n a l) in fo rm a tio n
on th e o th e r h a lf o f th e view ing area.
Fig. 3-17 illu stra te s th e basic c o n s tru c tio n o f th e 43 4
storage tu b e . The flo o d guns are low -energy e le c tro n guns
w h ic h d ire c t a large area flo w , or cones, o f electrons to w a rd
th e e n tire screen. T h e c o liim a tio n electrodes shape th e
flo o d spray fo r u n ifo rm coverage o f th e storage targets. The
opera tin g level o f th e tu b e is the p o te n tia l d iffe re n c e
betw een the ta rg e t backplates and th e flo o d gun cathodes.
The c o liim a tio n electrodes have no e ffe c t on th e b o m
barding energy o f th e flo o d gun electrons.
In th e store m ode re a d y -to -w rite state, th e in s u la to r sur
face o f th e ta rg e t tends to charge d o w n to a p o te n tia l lo w e r
th a n the b a ckp late p o te n tia l, and to w a rd the p o te n tia l o f
th e flo o d gun ca th o d e . T h is is due to flo o d gun c u rre n t
fro m th e in s u la to r surface. T he p o te n tia l to w h ich th e
ta rg e t charges is called its rest p o te n tia l. T h is p o te n tia l is
such th a t th e flo o d gun e le ctro n landing energy is n o t
enough to illu m in a te th e p h o s p h o r in th e ta rg e t. T he target
is n o w ready to w rite . See Fig. 3-18.
In th e w ritin g process, th e target is scanned by the
w ritin g gun electrons. These high energy electrons increase
the ta rg e t secondary emission over the area th e y scan, so
th a t th e ra tio o f secondary c u rre n t to p rim a ry c u rre n t
becomes greater th a n one. (T h is is shown in Fig. 3-18 as the
firs t crossover p o in t.) W hen th is ra tio exceeds one, th a t p a rt
o f the b o m barded surface sh ifts to a new stable state.
W ritin g has been accom plished and th is segm ent o f the
ta rg e t is n o w stored.
In th e w ritte n state, the p o te n tia l d iffe re n c e betw een the
flo o d gun cathode and ta rg e t becomes greater and th e flo o d
gun electrons n o w have a landing energy th a t is s u ffic ie n t to
p ro v id e a visual d isp la y. T h is visual d is p la y w ill c o n tin u e as
long as th e flo o d gun beam covers the target.
A t high sweep rates, th e w ritin g beam c u rre n t is n o t
adequate to b rin g the p o rtio n o f th e ta rg e t scanned above
th e crossover p o in t; th e re fo re , th e flo o d gun e le ctro n s w hen
landing on th e bom b a rde d area w ill rem ove the charge
developed b y the w ritin g gun e lectrons, and the target w ill
discharge to its in itia l re a d y -to -w rite state w ith o u t being
3 -2 6
F ig . 3 -1 7 . P ic to r ia l d ia g ra m o f sto ra g e tu b e C R T .
Содержание 434
Страница 6: ...Fig 1 1 4 3 4 O scilloscope 434 ...
Страница 41: ...Fig 3 3 Channel 2 Input A m p and Preamp detailed block diagram C ir c u it D e s c r ip tio n 4 3 4 ...
Страница 51: ...F ig 3 1 1 S w e e p G e n e ra to r d e ta ile d b lo c k d ia g ra m CO C irc u it D e s c rip tio n 4 3 4 ...
Страница 55: ...C871 Circuit Description 434 ...
Страница 110: ...Rackmounting 434 3 r i C V J o o o o o s w C V J o ip w 0 r 6 4 Fig 6 6 Dim ensional draw ing MkX ...
Страница 153: ......
Страница 157: ...P O A 5 CAM SW 1TC H C H 2 4 3 S20O CH Z INPUT A M P L IF IE R P R E A M P ...
Страница 159: ...4 3 4 5 C O jiiV S O O s 0 s 2 5M S ...
Страница 160: ...434 Fig 8 9 P O A 2 Partial V ertical c irc u it board ...
Страница 161: ...434 ...
Страница 162: ... ...
Страница 170: ... MI5V 3 ...
Страница 172: ......
Страница 173: ...434 Fig 8 20 P O A10 Partial Power Supply Secondary circuit board ...
Страница 174: ...434 Fig 8 21 A l l A 12 Transformer Primary and Secondary circuit boards ...
Страница 175: ......
Страница 177: ...434 5 200 D 3 5 V ...
Страница 179: ... l D z F d s 5V m s 5 7 r JL 4 3 4 S T O R A G E ...
Страница 187: ... FIG 1 Front ...
Страница 197: ...434 R434 FIG 2 Chassis Rear Standard Accessoires ...
Страница 199: ...s g 4 ...
Страница 200: ...434 R434 STORAGE OSCILLOSCOPE FIG 3 Cabinets ...