R8C/1A Group, R8C/1B Group
19. Electrical Characteristics
Rev.1.30
Dec 08, 2006
Page 288 of 315
REJ09B0252-0130
NOTE:
1.
V
CC
= 4.2 to 5.5 V at T
opr
= -20 to 85
°
C / -40 to 85
°
C, f(XIN) = 20 MHz, unless otherwise specified.
Table 19.14
Electrical Characteristics (1) [V
CC
= 5 V]
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
V
OH
Output “H” voltage
Except X
OUT
I
OH
= -5 mA
V
CC
−
2.0
−
V
CC
V
I
OH
= -200
µ
A
V
CC
−
0.3
−
V
CC
V
X
OUT
Drive capacity
HIGH
I
OH
= -1 mA
V
CC
−
2.0
−
V
CC
V
Drive capacity
LOW
I
OH
= -500
µ
A
V
CC
−
2.0
−
V
CC
V
V
OL
Output “L” voltage
Except P1_0 to
P1_3, X
OUT
I
OL
= 5 mA
−
−
2.0
V
I
OL
= 200
µ
A
−
−
0.45
V
P1_0 to P1_3
Drive capacity
HIGH
I
OL
= 15 mA
−
−
2.0
V
Drive capacity
LOW
I
OL
= 5 mA
−
−
2.0
V
Drive capacity
LOW
I
OL
= 200
µ
A
−
−
0.45
V
X
OUT
Drive capacity
HIGH
I
OL
= 1 mA
−
−
2.0
V
Drive capacity
LOW
I
OL
= 500
µ
A
−
−
2.0
V
V
T+-
V
T-
Hysteresis
INT0, INT1, INT3,
KI0, KI1, KI2, KI3,
CNTR0, CNTR1,
TCIN, RXD0
0.2
−
1.0
V
RESET
0.2
−
2.2
V
I
IH
Input “H” current
VI = 5 V
−
−
5.0
µ
A
I
IL
Input “L” current
VI = 0 V
−
−
-5.0
µ
A
R
PULLUP
Pull-up resistance
VI = 0 V
30
50
167
k
Ω
R
fXIN
Feedback resistance
XIN
−
1.0
−
M
Ω
f
RING-S
Low-speed on-chip oscillator frequency
40
125
250
kHz
V
RAM
RAM hold voltage
During stop mode
2.0
−
−
V