M16C/62P Group (M16C/62P, M16C/62PT)
23. Electrical Characteristics
Rev.2.41
Jan 10, 2006
Page 328 of 390
REJ09B0185-0241
Figure 23.11
Timing Diagram (9)
Read timing
Write timing
Memory Expansion Mode, Microprocessor Mode
(
For 3-wait setting, external area access and multiplex bus selection
)
BCLK
CSi
ALE
RD
ADi
/DBi
ADi
BHE
(no multiplex)
BCLK
CSi
ALE
ADi
/DBi
t
cyc
t
d(BCLK-AD)
25ns.max
t
cyc
Data output
t
h(BCLK-CS)
4ns.min
t
d(BCLK-CS)
25ns.max
t
d(BCLK-ALE)
25ns.max
t
h(BCLK-ALE)
-4ns.min
t
d(BCLK-RD)
25ns.max
t
h(BCLK-RD)
0ns.min
t
su(DB-RD)
40ns.min
t
h(RD-DB)
0ns.min
t
h(RD-AD)
(0.5
×
t
cyc
-10)ns.min
t
h(BCLK-AD)
4ns.min
t
d(BCLK-CS)
25ns.max
t
d(BCLK-AD)
25ns.max
t
h(BCLK-DB)
4ns.min
t
h(BCLK-WR)
0ns.min
t
h(WR-AD)
(0.5
×
t
cyc
-10)ns.min
t
h(BCLK-AD)
4ns.min
t
h(BCLK-CS)
4ns.min
t
d(BCLK-ALE)
25ns.max
t
d(BCLK-WR)
25ns.max
t
h(WR-DB)
(0.5
×
t
cyc
-10)ns.min
Data input
Address
Address
ADi
BHE
(no multiplex)
WR, WRL
WRH
Measuring conditions
· V
CC1
=V
CC2
=5V
· Input timing voltage : V
IL
=0.8V, V
IH
=2.0V
· Output timing voltage : V
OL
=0.4V, V
OH
=2.4V
t
d(AD-ALE)
(0.5
×
t
cyc
-25)ns.min
t
d(AD-RD)
0ns.min
t
dZ(RD-AD)
8ns.max
t
ac3(RD-DB)
t
d(BCLK-DB)
40ns.max
(0.5
×
t
cyc
-10)ns.min
t
h(WR-CS)
t
d(DB-WR)
(2.5
×
tcyc-40)ns.min
t
d(AD-WR)
0ns.min
t
h(RD-CS)
(0.5
×
t
cyc
-10)ns.min
t
d(AD-ALE)
(0.5
×
t
cyc
-25)ns.min
t
h(ALE-AD)
(2.5
×
t
cyc
-45)ns.max
t
cyc
=
1
f(BCLK)
(0.5
×
tcyc-15)ns.min
t
h(BCLK-ALE)
-4ns.min
V
CC1
=V
CC2
=5V
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