CHAPTER 5 MEMORY ACCESS CONTROL FUNCTION
User’s Manual U12688EJ4V0UM00
149
Figure 5-9. EDO DRAM Access Timing (3/4)
(c) Write timing 1
T1
T2
WAIT
D0 to D15
IOWR
IORD
LWR/LCAS
UWR/UCAS
WE
OE
RD
CSn/RASn
BCYST
A0 to A23
CLKOUT
Column address
TB
TE
TB
Data
Data
Data
Optional
Column
address
Column
address
Row
address
Remarks 1. This is the timing in the case of no waits.
2. The broken lines indicate high impedance.
3. n = 0 to 7
Содержание V850E/MS1 UPD703100
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