CHAPTER 5 MEMORY ACCESS CONTROL FUNCTION
User’s Manual U12688EJ4V0UM00
146
Figure 5-8. High-Speed Page DRAM Access Timing (4/4)
(d) Write timing 2
TRPW
T1
Data
WAIT
D0 to D15
IOWR
IORD
LWR/LCAS
UWR/UCAS
WE
OE
RD
CSn/RASn
BCYST
A0 to A23
CLKOUT
T2
TDAW
T3
TCPW TO1 TDAW TO2 TCPW TO1 TDAW
TO2
TRHW
Data
Data
Column address
Column address
Column address
Row address
Remarks 1. This is the timing in the following cases (
××
= 00 to 03, 10 to 13).
Number of waits according to bit RPC
××
(TRPW): 1
Number of waits according to bit RHC
××
(TRHW): 1
Number of waits according to bit DAC
××
(TDAW): 1
Number of waits according to bit CPC
××
(TCPW): 1
2. The circle indicates the sampling timing.
3. The broken lines indicate high impedance.
4. n = 0 to 7
Содержание V850E/MS1 UPD703100
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