TECHNICAL DATA
8
135
RM640
www.honeywellprocess.com
34-VF-25-131 iss.1 GLO Feb 2019 US
FOUNDATION
FOUNDATION
FOUNDATION
FOUNDATION
™
fieldbus
fieldbus
fieldbus
fieldbus (pending)
Physical layer
FOUNDATION
™
fieldbus protocol that agrees with IEC 61158-2 and FISCO model;
galvanically isolated
Communication standard
H1
ITK version
6.3
Function blocks
1 × Enhanced Resource Block (RB), 1 × Customer Level Transducer Block
(LEVELTB), 1 × Customer Converter Transducer Block (CONVTB), 1 × Customer
Diagnosis Transducer Block (DIAGTB), 4 × Analog Input Block (AI), 1 × Digital Input
(DI), 1 × Integrator Block (IT), 1 × Proportional Integral Derivate Block (PID), 1 ×
Arithmetic Block (AR)
Analog Input Block: 10 ms
Digital Input Block: 20 ms
Integrator Block: 15 ms
Proportional Integral Derivate Block: 25 ms
Device power supply
Not intrinsically safe: 9...32 V DC
Intrinsically safe: 9...24 V DC
Basic current
18 mA
Maximum error current FDE
25.5 mA (= basic c error current = 18 mA + 7.5 mA)
Polarity sensitivity
No
Minimum cycle time
250 ms
Output data
Level, distance, volume, ullage volume, mass, ullage mass
Input data
None
Link Active Scheduler
Supported
NAMUR NE 107 data
Supported with FF field diagnosis (FF-891)
Approvals and certification
CE
The device meets the essential requirements of the EU Directives. The
manufacturer certifies successful testing of the product by applying the CE
marking.
For more data about the EU Directives and European Standards related to this
device, refer to the EU Declaration of Conformity. You can download this document
free of charge from the website.
Vibration resistance
EN 60068-2-6 and EN 60721-3-4 (1...9 Hz: 3 mm / 10...200 Hz:1g, 10g shock
½
sinus: 11 ms)
Explosion protection
Explosion protection
Explosion protection
Explosion protection
ATEX (EU Type Approval)
- pending
II 1/2 G Ex ia IIC T6...T* Ga/Gb;
3
II 1/2 D Ex ia IIIC T85
°
C...T*
°
C Da/Db;
4
II 1/2 G Ex db ia IIC T6...T* Ga/Gb;
3
II 1/2 D Ex ia tb IIIC T85
°
C...T*
°
C Da/Db
4
ATEX (Type Approval)
- pending
II 3 G Ex ic IIC T6...T* Gc;
3
II 3 D Ex ic IIIC T85
°
C...T*
°
C Dc
4
IECEx
- pending
Ex ia IIC T6...T* Ga/Gb;
3
Ex ia IIIC T85
°
C...T*
°
C Da/Db;
4
Ex db ia IIC T6...T* Ga/Gb;
3
Ex ia tb IIIC T85
°
C...T*
°
C Da/Db;
4
Ex ic IIC T6...T* Gc;
3
Ex ic IIIC T85
°
C...T*
°
C Gc
4
Содержание RM640
Страница 4: ...4 www honeywellprocess com 34 VF 25 131 iss 1 GLO Feb 2019 US ABOUT THIS DOCUMENT RM640 ...
Страница 20: ...1 SAFETY INSTRUCTIONS 20 RM640 www honeywellprocess com 34 VF 25 131 iss 1 GLO Feb 2019 US ...
Страница 56: ...4 ELECTRICAL CONNECTIONS 56 RM640 www honeywellprocess com 34 VF 25 131 iss 1 GLO Feb 2019 US ...
Страница 120: ...6 OPERATION 120 RM640 www honeywellprocess com 34 VF 25 131 iss 1 GLO Feb 2019 US ...
Страница 164: ...9 DESCRIPTION OF HART INTERFACE 164 RM640 www honeywellprocess com 34 VF 25 131 iss 1 GLO Feb 2019 US ...
Страница 182: ...10 APPENDIX 182 RM640 www honeywellprocess com 34 VF 25 131 iss 1 GLO Feb 2019 US ...
Страница 183: ...APPENDIX 10 183 RM640 www honeywellprocess com 34 VF 25 131 iss 1 GLO Feb 2019 US ...