19 ELECTRICAL CHARACTERISTICS
S1C17M12/M13 TECHNICAL MANUAL
Seiko Epson Corporation
19-5
(Rev. 1.2)
OSC3 internal oscillation frequency-temperature characteristic
Typ. value
-50
20
18
16
14
12
10
8
6
4
2
0
-25
0
25
50
75
100
Ta [
°
C]
f
OSC3I
[M
Hz
]
16 MHz
12 MHz
8 MHz
4 MHz
EXOSC external clock input characteristics
Unless otherwise specified: V
DD
= 1.8 to 5.5 V, V
SS
= V
SS2
= 0 V, Ta = -40 to 85 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
EXOSC external clock duty ratio
t
EXOSCD
t
EXOSCD
= t
EXOSCH
/t
EXOSC
46
–
54
%
High level Schmitt input threshold voltage V
T+
0.5
×
V
DD
–
0.8
×
V
DD
V
Low level Schmitt input threshold voltage V
T-
0.2
×
V
DD
–
0.5
×
V
DD
V
Schmitt input hysteresis voltage
D
V
T
180
–
–
mV
EXOSC
t
EXOSCH
t
EXOSC
= 1/f
EXOSC
V
T+
V
T+
V
T-
t
EXOSCH
t
EXOSC
= 1/f
EXOSC
V
T+
V
T+
V
T-
19.6 Flash Memory Characteristics
Unless otherwise specified: V
DD
= 2.4 to 5.5 V, V
SS
= V
SS2
= 0 V
*
1
, Ta = -40 to 85 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Programming count
*
2
C
FEP
Programmed data is guaranteed to be
retained for 10 years.
1,000
–
–
times
*
1 The potential variation of the V
SS
voltage should be suppressed to within
±
0.3 V on the basis of the ground potential of the MCU
mounting board while the Flash is being programmed, as it affects the Flash memory characteristics (programming count).
*
2 Assumed that E Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.
19.7 Input/Output Port (PPORT) Characteristics
Unless otherwise specified: V
DD
= V
DD2
= 1.8 to 5.5 V, V
SS
= V
SS2
= 0 V, Ta = -40 to 85 °C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
High level Schmitt input
threshold voltage
V
T+
P00–07, P10–17, P20–24, P40–47, PD0–D1, PD3–D4
0.5
×
V
DD
– 0.8
×
V
DD
V
P50–54
0.5
×
V
DD2
– 0.8
×
V
DD2
V
Low level Schmitt input
threshold voltage
V
T-
P00–07, P10–17, P20–24, P40–47, PD0–D1, PD3–D4
0.2
×
V
DD
– 0.5
×
V
DD
V
P50–54
0.2
×
V
DD2
– 0.5
×
V
DD2
V
Schmitt input hysteresis
voltage
D
V
T
P00–07, P10–17, P20–24, P40–47, P50–54, PD0–D1, PD3–D4
180
–
–
mV
High level output current 1 I
OH1
P00–07, P10–17, P20–24, P40–47, PD0–D4, V
OH
= 0.9
×
V
DD
–
–
-0.5
mA
High level output current 2 I
OH2
P50–54, V
DD2
= 4.5
〜
5.5 V, V
OH
= V
DD2
- 1.0 V
–
–
-56
mA
Low level output current 1 I
OL1
P00–07, P10–17, P20–24, P40–47, PD0–D4, V
OL
= 0.1
×
V
DD
0.5
–
–
mA
Low level output current 2 I
OL2
P50–54, V
OL
= 0.1
×
V
DD2
2.0
–
–
mA
Low level output current 3 I
OL3
P40–47, V
DD
= 4.5
〜
5.5 V, V
OL
= V
SS2
+ 1.0 V
7
–
–
mA
Leakage current
I
LEAK
P00–07, P10–17, P20–24, P40–47, P50–54, PD0–D4
-150
–
150
nA
Input pull-up resistance
R
INU
P00–07, P10–17, P20–24, P40–47, P50–54, PD0–D1, PD3–D4
75
150
300
k
W
Input pull-down resistance R
IND
P00–07, P10–17, P20–24, P40–47, P50–54, PD0–D1, PD3–D4
75
150
300
k
W
Pin capacitance
C
IN
P00–07, P10–17, P20–24, P40–47, P50–54, PD0–D1, PD3–D4
–
–
15
pF