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EDR-5000
IM02602007E
51P, 67 P – Phase Overcurrent
Application ANSI 51P, 67 P
www.eaton.com
473
Fu
nd
.
R
M
S
N
am
e.
Cr
ite
rio
n
φ
N
am
e.
Tr
ip
C
m
d
N
am
e.
P
ic
ku
p
IA
N
am
e.
P
ic
ku
p
IB
N
am
e.
Pi
ck
up
IC
N
am
e.
T
rip
IH
2.
Bl
o
Ph
as
e
A
IH
2.
Bl
o
Ph
as
e
B
IH
2.
Bl
o
Ph
as
e
C
P
le
as
e
R
ef
er
to
D
ia
gr
am
: B
lo
ck
in
gs
**
Na
m
e.
Pi
ck
up
IA
IB
IC
N
am
e.
P
ic
ku
p
P
le
as
e
R
ef
er
to
D
ia
gr
am
:
Tr
ip
B
lo
ck
in
gs
In
ac
tiv
e
A
ct
iv
e
Na
m
e.
IH
2
Bl
o
(E
le
m
en
t i
s
no
t d
ea
ct
iv
at
ed
a
nd
n
o
ac
tiv
e
bl
oc
ki
ng
s
ig
na
ls
.)
AN
D
AN
D
AN
D
N
am
e.
IH
2
Bl
o*
Im
ax
(T
rip
pi
ng
c
om
m
an
d
de
ac
tiv
at
ed
o
r b
lo
ck
ed
. )
5
6
7
4
3
P
le
as
e
R
ef
er
to
D
ia
gr
am
: I
H
2*
P
le
as
e
R
ef
er
to
D
ia
gr
am
: I
H
2*
P
le
as
e
R
ef
er
to
D
ia
gr
am
: I
H
2*
24
b
25
b
26
b
14
O
R
O
R
AN
D
AN
D
AN
D
AN
D
AN
D
φ
IN
V
Im
ax
N
am
e.
t-r
es
et
N
am
e.
t-m
ul
tip
lie
r
N
am
e.
C
ur
ve
S
ha
pe
N
am
e.
Re
se
t M
od
e
B
as
e
d
on
a
b
ov
e
pa
ra
m
e
te
rs
,
tr
ip
pi
ng
ti
m
es
a
nd
r
es
e
t m
od
es
w
ill
be
c
al
cu
la
te
d
b
y
th
e
d
e
vi
ce
.
51
P/
67
P
[1
]..
.[n
]
N
am
e
=
51
P
/6
7P
[1
]..
.[n
]
*=Applies only to devices that offer Inrush Protection
N
am
e.
* I
[1
]..
.[n
] F
au
lt
in
P
ro
je
ct
ed
D
ire
ct
io
n
9
P
le
as
e
R
ef
er
to
D
ia
gr
am
: D
ire
ct
io
n
D
ec
is
io
n
P
ha
se
o
ve
rc
ur
re
nt
15
15
a