Amtech TEMPRESS, Руководство пользователя

Страница: 4 / 91

TABLE OF CONTENTS
P
ROCESS
M
ANUAL
II
3.2.4
Further fine-tuning .................................................. 3.2-2
3.3 Alarm handling with Branch and Abort commands ................ 3.3-1
3.3.1
Introduction ............................................................. 3.3-1
3.3.2
Do nothing with an alarms ...................................... 3.3-1
3.3.3
Handling alarms with the Branch command ........... 3.3-1
3.3.4
Handling alarms with the Abort command .............. 3.3-2
3.3.5
Recipe example: LPCVD Nitride abort recipe......... 3.3-3
3.4 Process acceptance conditions ............................................. 3.4-1
3.4.1
Introduction ............................................................. 3.4-1
3.4.2
Default process test conditions ............................... 3.4-4
4. Process description ..........................................................4-1
4.1 Nitride from NH
3
and SiH
2
Cl
2
................................................. 4.1-1
4.1.1
Basic configuration ................................................. 4.1-1
4.1.2
Description.............................................................. 4.1-1
4.1.3
Process result indication......................................... 4.1-2
4.1.4
Startup parameters for processing.......................... 4.1-2
4.1.5
Recommended cleaning interval ............................ 4.1-3
4.1.6
Gas schematic example: LPCVD siliconnitride ....... 4.1-4
4.1.7
Recipe example: LPCVD siliconnitride from SiH
2
Cl
2
and
NH
3
4.1-5
4.1.8
Troubleshooting a standard-nitride process............ 4.1-8
4.1.9
NH
4
Cl vapor pressure curve ................................... 4.1-9
4.2 Flat Polycrystalline Si from SiH
4
............................................. 4.2-1
4.2.1
Basic configuration ................................................. 4.2-1
4.2.2
Description.............................................................. 4.2-1
4.2.3
Process result indication......................................... 4.2-2
4.2.4
Startup parameters for processing.......................... 4.2-2
4.2.5
Recommended cleaning interval ............................ 4.2-2
4.2.6
Gas schematic example: LPCVD Flat poly ............. 4.2-4
4.2.7
Recipe example: LPCVD Flat poly-silicon from SiH
4
4.2-
5
4.2.8
Troubleshooting a flat poly process ........................ 4.2-8