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PROCESS SETUP AND ACCEPTANCE

ROCESS

ANUAL

3.4-6

3.4.2.3 Tempress Systems, Inc. LPCVD processes

LP-01 Ramped poly

test thickness: 3000Å
test temperature: 625

C (ramped)

time indication: 30 min
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer

LP-02 Flat poly

test thickness: 3000Å
test temperature: 610

time indication: 30 min
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer

LP-03 Sipos

test thickness: 2000Å
test temperature: 670

C (ramped)

time indication: 30 min
base: 1000Å dryoxide on Si wafer
testmethod: incremental thickness/mass method or ellipsometer

LP-04 Nitride

test thickness: 900Å (blue)
test temperature: 800

C (ramped)

time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer

LP-04s Low stress nitride

test thickness: 3000Å
test temperature: 850

time indication: 30 min
test refractive index: 2.15
test stress: <= 200MPa tensile
base: bare Si wafer
testmethod: ellipsometer, curvature

LP-05 Oxynitride

test thickness: 900Å
test temperature: 800

time indication: 30 min
test refractive index: 1.8
base: bare Si wafer
testmethod: ellipsometer

Содержание TEMPRESS

Страница 1: ...Process Manual Tempress Systems Inc Process manual M220 383 02 January 2004...

Страница 2: ......

Страница 3: ...ED 2 2 2 2 2 Touchscreen 2 2 2 2 3 Light tower 2 3 2 2 4 TSC Alarm menu 2 3 2 3 Light tower signal description 2 3 2 4 Toxic Material 2 5 2 5 Safety measures 2 5 3 Process setup and acceptance 2 5 1 3...

Страница 4: ...1 2 Description 4 1 1 4 1 3 Process result indication 4 1 2 4 1 4 Startup parameters for processing 4 1 2 4 1 5 Recommended cleaning interval 4 1 3 4 1 6 Gas schematic example LPCVD siliconnitride 4...

Страница 5: ...n LTO process 4 3 8 5 Operation Instructions 4 3 1 5 1 Load or Unload process wafers 5 1 1 5 1 1 Load process wafers 5 1 1 5 1 2 Unload wafers 5 1 1 5 2 Login TSC 2 5 2 1 5 2 1 TSC 2 5 2 1 5 3 Selecti...

Страница 6: ...d action 5 8 2 5 8 2 Touchscreen 5 8 2 5 8 3 TSC 2 5 8 3 5 9 Write Edit process recipe 5 9 2 5 9 1 Touchscreen 5 9 2 5 9 2 TSC 2 5 9 3 5 10 Edit graphical image 5 10 2 5 10 1 Touchscreen 5 10 2 5 10 2...

Страница 7: ...230 00 The Tempress Horizontal Diffusion Furnaces are fully described in the reference manuals M300 00 Tempress documentation set The complete Tempress documentation set includes Safety manual Operato...

Страница 8: ...ut the wafers on the boat fill in Lot ID Start the process and monitor the progress using the Touchscreen and or TSC II Process engineer The process engineer is a qualified chemical engineer who is re...

Страница 9: ...levels can be distinguished NOTE Notes alert to pay attention to items or procedures of special importance CAUTION Cautions alert for a potentially hazardous situation that may result in minor or mode...

Страница 10: ...results are defined in process acceptance Section 4 Process description Contains specific process information including chemicals used start up parameters and a basic recipe layout Section 5 Operatio...

Страница 11: ...a L shape diffusion system with 4 process tubes shown without the partition of a cleanroom wall It is a right handed system defined according to the position of the furnace relative to an operator Usu...

Страница 12: ...mplemented including the default inline loader the Amtech Atmoscan and the backmounted softlander To prevent particles on the wafers during the loading process a constant horizontal laminar flow is cr...

Страница 13: ...ording to EN 60204 1 especially EN 418 Pressing an EMO button turns off all power to the system except to the fans on top of the furnace This prevents fire hazard as a result of high heat concentratio...

Страница 14: ...ess This section describes the function of each light and its relation to the tube status Red Yellow Green A light tower is default comprised of 3 lights from top to bottom RED YELLOW and GREEN The gr...

Страница 15: ...Temperature powerpack is too high Bubbler temp Bubbler temp is too high Bubbler level Fluid level is too low O2 low O2 flow is too low Exhaust Low High Exhaust flow out of limits Limit alarm only if...

Страница 16: ...ible for all process related activities has to inform the operator about the hazards of the process See section 4 Process description or safety manual for a complete description of all details 2 5 Saf...

Страница 17: ...rove readability for the user 3 1 2 6 steps to a process recipe 3 1 2 1 Step 1 Determine the required process temperature The first step is to define the required process temperatures These include th...

Страница 18: ...Step 2 3 1 2 6 Step 6 Fill in each block Each block can now be programmed It must be recognized that Step 0 the first step has some unique properties that are not found in any other step 1 standby ste...

Страница 19: ...programming the boat in 3 1 4 Modifying the default Tempress recipe The default Tempress process recipe is designed with Step 0 as Standby for all atmospheric processes Obviously customers are free to...

Страница 20: ...ocesses and the LPCVD processes 3 2 3 1 Atmospheric process calculate the required gasflow to obtain a refresh interval of 3 minutes for process conditions and 5 minutes for standby conditions Take in...

Страница 21: ...ure Most LPCVD processes exhibit the depletion effect This shows as a reduction in the deposition rate at the pump side due to consumption of process gases The reason to start of with a flat temperatu...

Страница 22: ...er 3 seconds of consecutive alarm condition and jumps to the designated step within the same process recipe The Abort on Alarm command is issued after 30 seconds of consecutive alarm condition and abo...

Страница 23: ...or via an Abort Recipe An Abort recipe also contains steps and is used to bring the tube in a safe condition Note An Abort recipe must be programmed such that a tube is automatically brought to a SAFE...

Страница 24: ...ime 000 15 00 hr min sec Variable Command No 4 Normal recipe 00 Zone1 800 0 C Slope 10 00 C min Zone2 800 0 C Slope 10 00 C min Zone3 800 0 C Slope 10 00 C min Zone4 800 0 C Slope 10 00 C min Zone5 80...

Страница 25: ...NDBY 1 Sonalert alarm Yes 26 Digital out N2 PURGE 9 ON N2PROCES 10 ON PROCESS 11 ON EVACDCS1 12 OFF EVACDCS2 13 OFF EVACNH3 14 OFF SOFTSTRT 15 ON MAINVAC 16 ON Variable Command No 27 Wait for operator...

Страница 26: ...plicable 3 4 1 1 Uniformity definitions Standard edge exclusion 5 to 9 mm depending on wafer size and process unless otherwise stated in the process specifications Table 3 2 Default edge exclusion Waf...

Страница 27: ...based on the average wafer values as determined in the point to point uniformity calculation W W Uniformity maximum wafer average value minimum wafer average value 2 average all wafer average value T...

Страница 28: ...pment Sheet resistivity should be measured with an automated 4 point probe or comparable machine Dopant concentration measurement should be supplied by the customer Dopant variation will be characteri...

Страница 29: ...al Test temperature overshoot and stability Atm 02 Metalalloy anneal Test temperature overshoot and stability Atm 03 Dry oxidation test thickness 500 test temperature 1000oC time indication 60 min bas...

Страница 30: ...resistivity 8 or 30 ohm square test temperature 900oC deposition 1000 drive in oC time indication 30 min 30 min base bare Si wafer testmethod four point probe Atm 09 reserved Atm 10 reserved Atm 11 re...

Страница 31: ...erature 670oC ramped time indication 30 min base 1000 dryoxide on Si wafer testmethod incremental thickness mass method or ellipsometer LP 04 Nitride test thickness 900 blue test temperature 800oC ram...

Страница 32: ...wafer testmethod ellipsometer LP 09 Phosphorous doped poly test thickness 5000 test temperature 600oC time indication 400 min test sheet resistivity 20 ohm square after 30 min 900oC N2 anneal base 100...

Страница 33: ...nt concentration 8 P test temperature 425oC time indication 30 min base bare Si wafer testmethod ellipsometer thickness SIMS dopant LP 17 reserved LP 18 BPSG LTO test thickness 2000 dopant concentrati...

Страница 34: ...PROCESS SETUP AND ACCEPTANCE PROCESS MANUAL 3 4 9...

Страница 35: ...cluding Atmospheric Anneal Dry Oxidation with or without TransLC cleaning Wet Oxidation with or without TransLC cleaning POCl3 Low pressure Ramped Poly Flat Poly Nitride TEOS LTO Ta2O5 Because of the...

Страница 36: ...y form is what occurs as the gasses cool down abruptly on a cold surface This is the form that is wanted on the coldtrap The white form occurs from condensation in the gas phase and will not be trappe...

Страница 37: ...ooled flange is required to extent O ring lifetime due to the high temperature of 770 800 830oC Especially at unloading conditions the door O ring is likely to burn Also the balljoint O ring receives...

Страница 38: ...50 TS840x 150 200 30 250 1000 800 50 150 TS860x 150 200 30 250 1000 800 60 180 TS8100x 150 200 30 250 1000 800 100 300 TS1280x 200 300 30 200 1000 800 150 450 4 1 5 Recommended cleaning interval Clean...

Страница 39: ...PROCESS DESCRIPTION PROCESS MANUAL 4 1 6 Gas schematic example LPCVD siliconnitride Water Coldtrap Baratron 10T ATM Vacuum testport To pump PS N2 NH3 DCS 4 1 4...

Страница 40: ...ON OPERATE 12 ON WARNING 13 ON FAILURE 14 ON 15 01 BOAT OUT 16 Message BOAT OUT 3 Sonalert alarm No 17 Time 000 10 00 hr min sec Variable Command No 18 Boat to 10 0 mm at 300 0 mm min with oscillatio...

Страница 41: ...R Variable Command No 53 08 EVACUATE 54 Message EVACUATE 3 10 Sonalert alarm No 55 Time 000 05 00 hr min sec Variable Command No 56 Digital out N2 PURGE 9 OFF N2PROCES 10 ON PROCESS 11 ON EVACDCS1 12...

Страница 42: ...S1 12 OFF EVACDCS2 13 OFF EVACNH3 14 OFF SOFTSTRT 15 ON MAINVAC 16 ON Variable Command No 94 Alarm Limit Setting for All Analog Output Channel at 0 95 15 EVAC CONTINUED 96 Message EVACUATE 3 10 Sonale...

Страница 43: ...2 ON doorclsd 3 ON VACFAIL 4 OFF WATRCOOL 5 ON TEMP SCR 7 ON EXCESS 8 ON 129 Abort recipe 08 130 21 BACKFILL 2 131 Message BACKFILL 14 Sonalert alarm No 132 Time 000 10 00 hr min sec Variable Command...

Страница 44: ...p Decrease process pressure No consistency in uniformity Dirty quartz ware or wafers No constant pressure control Draft along the furnace Clean tube quartz ware and paddle Use clean wafers Check press...

Страница 45: ...PROCESS DESCRIPTION PROCESS MANUAL Figure 1 NH4Cl vapor pressure 4 1 10...

Страница 46: ...This can be improved in basically two manners by using a high flow of inert gases to dilute the SiH4 and reduce its consumption This will affect the growth rate since the partial pressure of SiH4 is...

Страница 47: ...to be coated before any automatic profiling is performed Use the default process settings for 1 hour to obtain a reasonable coating An oxidized substrate wafer is required to enable accurate measureme...

Страница 48: ...PROCESS DESCRIPTION PROCESS MANUAL 4 2 3 Tube Cassettes baffles SiC paddle Trap upstream tubing Oil and filter change Poly 20 100 10 10 80...

Страница 49: ...PROCESS DESCRIPTION PROCESS MANUAL 4 2 6 Gas schematic example LPCVD Flat poly Injector Pump exhaust burn chamber Vacuum test port To pump Baratron 10T ATM option PS N2 SiH4 4 2 4...

Страница 50: ...alarm No 15 Time 000 10 00 hr min sec Variable Command No 16 Boat to 10 0 mm at 300 0 mm min with oscillation speed of 0 0 mm min Variable Command No 17 Gas N2 1 at 10 0 slm Variable Command No 18 Dig...

Страница 51: ...CSIL3 14 OFF SOFTSTRT 15 OFF MAINVAC 16 ON Variable Command No 54 09 LEAKCHECK 55 Message LEAKCHECK 11 Sonalert alarm No 56 Time 000 02 00 hr min sec Variable Command No 57 Digital out N2 PURGE 9 OFF...

Страница 52: ...mmand No 95 Alarm limit setting for Gas PRESSURE 8 at 1 0 0 Variable Command No 96 Wait for gas PRESSURE 8 97 15 PURGE 98 Message PURGE 12 Sonalert alarm No 99 Time 000 05 00 hr min sec Variable Comma...

Страница 53: ...h in the tube The paddle is colder then the wafers and the tube Adjust height of the paddle at the cantilever system Insert temperature stabilization step in the recipe after evacuate and or heat up s...

Страница 54: ...eaks can be dangerous near hot areas SiH4 is a pyrogenic gas which means it will burn spontaneously when it comes into contact with O2 or air It is also toxic and should be handled accordingly althoug...

Страница 55: ...O2 one or two extra holes are added at the door side If strong depletion is observed and the cross load uniformity is not improving some N2 can be added to the SiH4 injector The pressure should be ke...

Страница 56: ...effect 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 cage 1 cage 2 cage design cross wafer uniformity 4 3 5 Process result indication LTO process results 2 injector design effect 0 0 2 0 4 0 6 0 8 0 10 0 12...

Страница 57: ...PROCESS DESCRIPTION PROCESS MANUAL 4 3 6 Gas schematic example LPCVD LTO Baratron 10T ATM Vacuum test port To pump PS N2 O2 SiH4 4 3 4...

Страница 58: ...T 3 Sonalert alarm No 15 Time 000 10 00 hr min sec Variable Command No 16 Boat to 10 0 mm at 300 0 mm min with oscillation speed of 0 0 mm min Variable Command No 17 Gas N2 1 at 10 00 SLM Variable Com...

Страница 59: ...OFF N2PROCES 10 ON PROCESS 11 ON EVACSIH4 12 OFF SOFTSTRT 15 OFF MAINVAC 16 ON Variable Command No 54 09 LEAKCHECK 55 Message LEAKCHECK 11 Sonalert alarm No 56 Time 000 02 00 hr min sec Variable Comma...

Страница 60: ...m limit setting for Gas SIH4 3 at 0 0 0 SCCM Variable Command No 93 Alarm limit setting for Gas PRESSURE 8 at 0 0 MTOR Variable Command No 94 15 EVACUATE 95 Message EVACUATE 3 10 Sonalert alarm No 96...

Страница 61: ...arrier gas Increase temperature ramp door side temperature lower then pump side temperature Use different injector design Increase N2 carrier gas Wafers are thick at the pump side and thin at the door...

Страница 62: ...ers Place the wafers on the wafer carriers depending on the situation with vacuum tweezers or a wafer transfer system Pick up wafer carriers with a pick up fork or automated loading tool Place the waf...

Страница 63: ...ame may be required to couple process data to operator and process proceeding for logging data 5 2 1 TSC 2 1 Press ID to Login as screen until following screen appears USER LOGIN 2 Type the personal u...

Страница 64: ...ons can be executed A new process recipe can only be selected if the current process recipe is in Step 0 5 3 1 Touchscreen 1 return to the Main Menu by pressing ESC until the following screen appears...

Страница 65: ...ON INSTRUCTIONS PROCESS MANUAL 5 press Yes to confirm the question Sure to SELECT PROCESS recipe Yes No Note selecting another process recipe is only possible if the current process recipe is in Step...

Страница 66: ...verview screen 2 select Operations to access the operations screen 3 Select the desired process recipe from the pull down menu 4 Press Yes to confirm the question Are you sure to select another proces...

Страница 67: ...pe so it starts running from Step 0 The second situation is starting a process recipe that has been stopped or is waiting for an Operator instruction 5 4 1 Touchscreen 1 return to the Main Menu by pre...

Страница 68: ...m the Overview screen 2 select Operations to access the operations screen 3 press Start to start the selected process recipe from Step 0 4 press Continue to start a process recipe that has been stoppe...

Страница 69: ...the process recipe When activated the Stop command will stop the timer while all given commands are maintained 5 5 1 Touchscreen 1 return to the Main Menu by pressing ESC until the following screen a...

Страница 70: ...S MANUAL 5 5 2 TSC 2 1 select the desired tube from the pull down menu or from the Overview screen 2 select Operations to access the operations screen 3 Press Pause to stop the selected process recipe...

Страница 71: ...ped process recipe needs to be reset to Step 0 to allow selection of another process recipe 5 6 1 Touchscreen 1 return to the Main Menu by pressing ESC until the following screen appears 2 press 4 to...

Страница 72: ...TSC 2 1 select the desired tube from the pull down menu or from the Overview screen 2 select Operations to access the operations screen 3 Press Abort to abort the selected process recipe 4 Press Yes...

Страница 73: ...at all times until the recipe step is executed in which the specific Variable Command is programmed 5 7 1 Touchscreen 1 return to the Main Menu by pressing ESC until the following screen appears 2 pr...

Страница 74: ...OPERATION INSTRUCTIONS PROCESS MANUAL 5 7 2 commands stored appears 7 Go to the Start Continue a new process recipe procedure to start the process recipe if it is not running...

Страница 75: ...elect Edit Variable Commands to open the list with available Variable Commands 4 edit the desired process setting 1 highlight the desired process setting 2 press Edit to open the Edit mode 3 modify to...

Страница 76: ...or action press Start for example alarm signal a continuous beeeeeeeeeeeeep to alert for an alarm situation 5 8 1 Required action Operator alert signals beep beep beep require the operator to press St...

Страница 77: ...s an instant view of which tubes are in alarm in RED 2 select the desired tube from the pull down menu or from the Overview screen 4 select the Alarm screen 3 read the alarm message s 4 take the appro...

Страница 78: ...iting an existing and RUNNING recipe is possible but poses considerable danger It is therefore NOT allowed except when using variable commands only 5 9 1 Touchscreen 1 return to the Main Menu by press...

Страница 79: ...en 2 select Recipes in the navigation bar to access the recipe screen 3 double click Normal or Abort in the mainfield 4 select New to create a new or Edit to edit a process recipe 5 for a new process...

Страница 80: ...OPERATION INSTRUCTIONS PROCESS MANUAL 7 select a recipe to copy from or cancel 8 repeat step 3 7 for each process step and command 5 9 4...

Страница 81: ...cations The touchscreen allows predefined symbols and locations only TSC 2 allows total freedom for the graphical operations screen layout Note For accurate representation keep the process gas schemat...

Страница 82: ...uate Valve if applicable Select the appropriate Digital Output number DOx 10 select G 2 to access the second part of the graphical system layout 11 select the appropriate gas number Analog Output numb...

Страница 83: ...OPERATION INSTRUCTIONS PROCESS MANUAL 16 select DIS to test the graphical system layout 17 select SET to activate the selected screen 5 10 4...

Страница 84: ...the main overview screen 2 select System in the navigation bar to access the system overview screen 3 select the desired tube from the pull down menu or from the previous Overview screen 4 select Oper...

Страница 85: ...cluding tube numbers 7 select the Object Library button to gain access to predefined objects 8 standard objects include line square circle ellipse arc and text objects 9 customer objects include valve...

Страница 86: ...Open Dialog button to edit an existing screen 12 an example screen is presented next 13 connect object properties to DPC or DTC parameters by selecting the object and pressing the RMB 14 Check the con...

Страница 87: ...O status Recommended value is 0 05 17 Select Absolute for real value change of a text object such as gas flow AO or temperature spike or paddle 18 Select Relative with Multiply for a relative change s...

Страница 88: ...the process results This logging function is only available in TSC 2 not on a touchscreen 5 11 1 TSC 2 only 1 Return to the main overview screen 2 Select Data in the navigation bar to access the data...

Страница 89: ...desired Start Time is later than the time already shown the END Time must be extended first 7 Select History Lot to search all logging data for matching Lot IDs Note use wildcards to extend the search...

Страница 90: ...l for real time logging 10 Select the Graphical tab page for a graphical presentation of the logging data found by the search criteria above 11 Select the Data tab page for the raw data presentation o...

Страница 91: ...t the Alarm tab page for all alarm messages of the logging data found by the search criteria above 13 Use the Right Mouse Button RMB in the Graphical tab page to gain access to the customization dialo...

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