PROCESS SETUP AND ACCEPTANCE
P
ROCESS
M
ANUAL
3.4-7
LP-06 undoped TEOS
test thickness: 2000Å
test temperature: 725
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-07 undoped LTO
test thickness: 1500 Å
test temperature: 425
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-08 HTO
test thickness: 900 Å
test temperature: 900
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-09 Phosphorous doped poly
test thickness: 5000Å
test temperature: 600
o
C
time indication: 400 min
test sheet resistivity: 20 ohm/square (after 30 min 900
o
C N
2
anneal)
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer (thickness), four-point probe (sheet resistivity)
LP-10 Boron doped poly
test thickness: 5000Å
test temperature: 600
o
C
time indication: 400 min
test sheet resistivity: 20 ohm/square (after 30 min 900
o
C N
2
anneal)
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer (thickness), four-point probe (sheet resistivity)
LP-11 reserved
LP-12 reserved
LP-13 reserved