Samsung HP-R5052, Service Manual

Page: 111 / 128

Circuit Description
Samsung Electronics 13-19
■
Mechanism of the FET Operation and High-Voltage Switching
Mechanism of the FET Operation
1) When the signal is output to the gate, (positive electric
potential) FET short circuits
(i.e. Conductor of resistance 0)
2) When no signal is output to the gate (GND), FET changes
to an open circuit (i.e. an insulator of resistance
∞
).
High-Voltage Switching of the FET Operation
1) When no signal is applied to G1, FET1 is
opened and when the signal is applied to G2,
FET2 short circuits, GND is output via the output
terminal.
2) When a signal is applied to G1, FET1 short cir
cuits and when no signal is applied to G2, FET2
is opened, and 180V is output via the output
terminal.