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20.4.2
User Program Mode
The user MAT can be programmed/erased in user program mode. (The user boot MAT cannot be
programmed/erased.)
Programming/erasing is executed by downloading the program in the microcomputer.
The overview of programming/erasing flow is shown in figure 20.9.
High voltage is applied to the internal flash memory during programming/erasing processing.
Therefore, a transition to a reset or hardware standby must not be made during
programming/erasing processing. Doing so may damage or destroy flash memory. If a reset is
executed accidentally, a reset must be released after the reset input period of 100
µ
s which is
longer than normal.
When programming,
program data is prepared
Programming/erasing
procedure program is
transferred to the on-chip
RAM and executed
Programming/erasing
start
Programming/erasing
end
Make sure that program data will not overlap the download
destination specified by FTDAR.
The FWE bit is set to 1 by inputting a high level signal to the FWE
pin.
Programming/erasing is executed only in the on-chip RAM.
However, if program data is in a consecutive area and can be
accessed by the MOV.B instruction of the CPU like RAM or
ROM, the program data can be in an external space.
After programming/erasing is finished, input a low level signal to
the FWE pin and enter the hardware protection state.
1.
2.
3.
4.
Figure 20.9 Overview of Programming/Erasing Flow
Summary of Contents for H8S/2437
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