S12XS Family Reference Manual, Rev. 1.13
Freescale Semiconductor
557
Chapter 19
128 KByte Flash Module (S12XFTMR128K1V1)
19.1
Introduction
The FTMR128K1 module implements the following:
•
128 Kbytes of P-Flash (Program Flash) memory
•
8 Kbytes of D-Flash (Data Flash) memory
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
Table 19-1. Revision History
Revision
Number
Revision
Date
Sections
Affected
Description of Changes
V01.04
03 Jan 2008
- Cosmetic changes
V01.05
19 Dec 2008
19.4.2.4/19-592
19.4.2.6/19-594
19.4.2.11/19-59
- Clarify single bit fault correction for P-Flash phrase
- Add statement concerning code runaway when executing Read Once,
Program Once, and Verify Backdoor Access Key commands from Flash block
containing associated fields
- Relate Key 0 to associated Backdoor Comparison Key address
- Change “power down reset” to “reset” in
V01.06
25 Sep 2009
19.3.2.1/19-566
19.4.1.2/19-586
The following changes were made to clarify module behavior related to Flash
register access during reset sequence and while Flash commands are active:
- Add caution concerning register writes while command is active
- Writes to FCLKDIV are allowed during reset sequence while CCIF is clear
- Add caution concerning register writes while command is active
- Writes to FCCOBIX, FCCOBHI, FCCOBLO registers are ignored during
reset sequence
Summary of Contents for MC9S12XS128
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