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ECP5 and ECP5-5G Hi
g
h-Speed I/O Interface
DDR2/DDR3 Memory Interface Termination Guidelines
(These updates are still preliminary. We will need to update again once the whole validation processes are com-
pleted.)
Proper termination of a DDR memory interface is an important part of implementation that ensures reliable data
transactions at high speed. Below is the general termination guideline for the ECP5 and ECP5-5G device DDR
memory interface.
Termination for DQ, DQS and DM
• Do not locate any termination on the memory side. The memory side termination on DQ, DQS and DM is dynam-
ically controlled by the DDR3 SDRAM's ODT function.
• Do not locate any termination on the FPGA side. The ECP5 and ECP5-5G device has internal termination on DQ
and DQS, which is dynamically controlled. Use the TERMINATION preference for DQ and DQS pads to enable
the internal parallel termination to VCCIO/2. The TERMINATION preference has the OFF, 50-, 60-, and 75-ohm
options. (Recommended setting for each interface TBD)
Termination for CK
DDR memory clocks require differential termination because they use a differential signaling. Use SSTL15D in
DDR3 or SSTL18D in DDR2 to drive the clock signals. You can locate an effective 100-ohm termination resistance
on the memory side to achieve the differential termination using the following guideline:
• Locate a 100-ohm resistor between the positive and negative clock signal, OR
• Connect one end of an Rtt resistor to the positive pin and one end of another Rtt to the negative pin of a CK pair,
then connect the other ends of two Rtt resistors together and return to VDD or GND through a Ctt capacitance.
Note that the JEDEC CK termination scheme defined in the DIMM specifications uses 36-ohm for Rtt with 0.1uF
Ctt for DIMM for DDR3 DIMMs returning to VDD. 50-ohm Rtt can also be used for non-DIMM applications.
• Use of series termination resistors at the FPGA side is not recommended.
When fly-by wiring is used in DDR3, the CK termination resistor should be located after the last DDR3 SDRAM
device.
Termination for Address, Commands and Controls
• Parallel termination to VTT on address, command and control lines is typically required at the DDR2/DDR3 and
DDR3L memory side:
• Locate a 50-ohm parallel-to-VTT resistor (or a best known resistance obtained from your SI simulation) to each
address, command and control line on the memory side.
• Series termination resistors can be optionally used on the address, command and control signals to suppress
overshoot/undershoot and to help decrease overall SSO noise level. 22-ohm or 15-ohm series termination is rec-
ommended when used.
• When fly-by wiring is used in DDR3, the address, command and control termination resistors should be located
after the last DDR3 SDRAM device.\
No termination is required on the LPDDR2 and LPDDR3 CA bus and control lines. They use point-to-point connec-
tions.