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ECP5 and ECP5-5G Hi
g
h-Speed I/O Interface
DDR Memory Interface Desi
g
n Rules and Guidelines
Listed below are some rules and guidelines to keep in mind when implementing DDR memory interfaces in ECP5
and ECP5-5G devices. ECP5 and ECP5-5G devices have dedicated DQS banks with the associated DQ pads.
• The left and right sides of an ECP5 and ECP5-5G device share an identical I/O structure. All of the memory inter-
faces can be implemented on these sides.
• The Top side of the device does not support DQSBUF blocks hence will not support DDR memory interfaces.
Although some of the ADDR/CMD generation that uses ODDRX1 modules can be placed on the top side of the
device for DDR2, DDR3 and DDR3L.
• DDRDLLA primitive should be instantiated for all DDR memory interfaces. Each DDRDLLA generates 90° digital
delay code for all the connected DQS delay blocks based on the reference clock input to the DDRDLLA. There-
fore, all the DDR memory interfaces under the same DDRDLLA coverage must run at the same frequency.
• There are four DDRDLLs on each device, one DDRDLL in each corner of the device. Each DQSBUF module can
receive delay codes from either of the DDRDLLs in each top and bottom corner of the device. This would be an
exception for the smallest device where there are only two DDRDLLs on the device.
• When a DDR memory interface is added to the side where another DDR memory interface is running at a differ-
ent frequency, another available DDRDLLA for the side must be instantiated and used for the new interface.
• The reference clock input to the PLL used in the DDR memory interface implementation must be located to the
dedicated PLL pin or a PCLK pin. The dedicated PLL input pin is preferred due to less skew.
• Each DDR memory interface must use its corresponding I/O standard.
– For the DDR2 memory interface, the interface signal should use the SSTL18 I/O standards.
– For the DDR3 memory interface, these signals should be connected to the SSTL15 standards.
– For the DDR3L memory interface, these signals should be connected to the SSTL135 standards.
– For the LPDDR2 and LPDDR3 memory interface, the interface signal should use the HSUL12 standard.
– DDR3, DDR3L, LPDDR2 and LPDDR3 memory interfaces also requires differential DQS signals. The use of
differential DQS is optional for DDR2.
Table 5 shows the IO_TYPE setup for each of the DDR memory interfaces.
Table 5. I/O Standards for DDR Memory
• When implementing the DDR interface, the VREF1 of the bank is used to provide the reference voltage for the
interface pins.
DDR2
DDR3
DDR3L
LPDDR2
LPDDR3
DQ
SSTL18_I,
SSTL18_II
SSTL15_I,
SSTL15_II
SSTL135_I,
SSTL135_II
HSUL12
HSUL12
DQS
SSTL18_I,
SSTL18_II,
SSTL18D_I,
SSTL18D_II
SSTL15D_I,
SSTL15D_II
SSTL135D_I,
SSTL135D_II
HSUL12D
HSUL12D
Cmd/Addr
SSTL18_I,
SSTL18_II
SSTL15_I,
SSTL15_II
SSTL135_I,
SSTL135_II
HSUL12
HSUL12
CK
SSTL18D_I,
SSTL18D_II
SSTL15D_I,
SSTL15D_II
SSTL135D_I,
SSTL135D_II
HSUL12D
HSUL12D