Freescale Semiconductor HCS12X, Reference Manual

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Chapter 24 128 KByte Flash Module (S12XFTM128K2V1)
MC9S12XE-Family Reference Manual , Rev. 1.19
870 Freescale Semiconductor
12
24.4.2.5 Program P-Flash Command
The Program P-Flash operation will program a previously erased phrase in the P-Flash memory using an
embedded algorithm.
CAUTION
A P-Flash phrase must be in the erased state before being programmed.
Cumulative programming of bits within a Flash phrase is not allowed.
Upon clearing CCIF to launch the Program P-Flash command, the Memory Controller will program the
data words to the supplied global address and will then proceed to verify the data words read back as
expected. The CCIF flag will set after the Program P-Flash operation has completed.
Table 24-40. Read Once Command Error Handling
Register Error Bit Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 001 at command launch
Set if command not available in current mode (see Table 24-30 )
Set if an invalid phrase index is supplied
FPVIOL None
MGSTAT1 Set if any errors have been encountered during the read
MGSTAT0 Set if any non-correctable errors have been encountered during the read
FERSTAT EPVIOLIF None
Table 24-41. Program P-Flash Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x06
Global address [22:16] to
identify P-Flash block
001 Global address [15:0] of phrase location to be programmed
(1)
1. Global address [2:0] must be 000
010 Word 0 program value
011 Word 1 program value
100 Word 2 program value
101 Word 3 program value
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