DIGITAL-LOGIC MICROSPACE MSEP800, Technical User'S Manual

Page: 107 / 140

DIGITAL-LOGIC AG
MSEP800 Manual V1.0G
107
12.2.1.1 CPLD input / output electrical parameters
Warning:
The input / output pins on the connectors are connected directly to the CPLD without any buffer
or ESD protection circuit. Therfore it is recomanded that the applied I/O voltages are within the
electrical parameters of the chip.
The following values are taken from the Xilinx datasheet „XC95144XL High Performance CPLD
DS056 (v1.5) August 21, 2003 Preliminary Product Specification“.
More information available on the website
www.xilinx.com .
12.2.1.1.1
Absolute Maximum Ratings
Symbol Description Value Units
V
IN
Input voltage relative to GND
(1)
–0.5 to 5.5 V
V
TS
Voltage applied to 3-state output
(1)
–0.5 to 5.5 V
Notes:
1. Maximum DC undershoot below GND must be limited to either 0.5V or 10 mA,
whichever is easier to achieve. During
transitions, the device pins may undershoot to –2.0 V or overshoot to +7.0V,
provided this over- or undershoot lasts
less than 10 ns and with the forcing current being limited to 200 mA.
2. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to
the device. These
are stress ratings only, and functional operation of the device at these or any other conditions beyond
those listed
under Operating Conditions is not implied. Exposure to Absolute Maximum Ratings conditions for
extended periods of
time may affect device reliability.
12.2.1.1.2
Recommended Operation Conditions
Symbol Parameter Min Max Units
V
IL
Low-level input voltage 0 0.80 V
V
IH
High-level input voltage 2.0 5.5 V
V
O
Output voltage 0 3.3 V
12.2.1.1.3
DC Characteristic Over Recommended Operating Conditions
Symbol Parameter Test Conditions Min Max Units
V
OH
Output high voltage for 3.3V outputs I
OH
= –4.0 mA 2.4 - V
V
OL
Output low voltage for 3.3V outputs I
OL
= 8.0 mA - 0.4 V
I
IL
Input leakage current V
CC
= Max; V
IN
= GND or V
CC
- ±10
µ
A
I
IH
I/O high-Z leakage current V
CC
= Max; V
IN
= GND or V
CC
- ±10
µ
A
V
CC
= Max; V
CCIO
= Max;
V
IN
= GND or 3.6V
- ±10
µ
A
I
IH
I/O high-Z leakage current
V
CC
Min < V
IN
< 5.5V - ±50
µ
A
C
IN
I/O capacitance V
IN
= GND; f = 1.0 MHz - 10 pF