
4.1.10 Flash Memory Characteristics
Table 4.19. Flash Memory Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Flash erase cycles before
failure
EC
FLASH
10000
—
—
cycles
Flash data retention
RET
FLASH
10
—
—
years
Word (32-bit) programming
time
t
W_PROG
20
26
40
μs
Page erase time
t
PERASE
20
27
40
ms
Mass erase time
t
MERASE
20
27
40
ms
t
DERASE
—
60
74
ms
I
ERASE
—
—
3
mA
Mass or Device erase cur-
rent
—
—
5
mA
Write current
I
WRITE
—
—
3
mA
Note:
1. Flash data retention information is published in the Quarterly Quality and Reliability Report.
2. Device erase is issued over the AAP interface and erases all flash, SRAM, the Lock Bit (LB) page, and the User data page Lock
Word (ULW)
3. Measured at 25°C
BGM11S Blue Gecko
Bluetooth
®
SiP Module Data Sheet
Electrical Specifications
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