
4.1.4.3 Current Consumption 1.85 V (DC-DC in Bypass Mode)
Unless otherwise indicated, typical conditions are: VDD = 1.85 V. T
OP
= 25 °C. DC-DC in bypass mode. Minimum and maximum values
in this table represent the worst conditions across supply voltage and process variation at T
OP
= 25 °C.
Table 4.6. Current Consumption 1.85V without DC/DC
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Current consumption in EM0
Active mode with all periph-
erals disabled
I
ACTIVE
38.4 MHz crystal, CPU running
while loop from flash
—
131
—
μA/MHz
38 MHz HFRCO, CPU running
Prime from flash
—
88
—
μA/MHz
38 MHz HFRCO, CPU running
while loop from flash
—
100
—
μA/MHz
38 MHz HFRCO, CPU running
CoreMark from flash
—
112
—
μA/MHz
26 MHz HFRCO, CPU running
while loop from flash
—
102
—
μA/MHz
1 MHz HFRCO, CPU running
while loop from flash
—
220
—
μA/MHz
Current consumption in EM1
Sleep mode with all peripher-
als disabled
I
EM1
38.4 MHz crystal
—
65
—
μA/MHz
38 MHz HFRCO
—
35
—
μA/MHz
26 MHz HFRCO
—
37
—
μA/MHz
1 MHz HFRCO
—
154
—
μA/MHz
Current consumption in EM2
Deep Sleep mode
I
EM2
Full RAM retention and RTCC
running from LFXO
—
3.2
—
μA
4 kB RAM retention and RTCC
running from LFRCO
—
2.8
—
μA
Current consumption in EM3
Stop mode
I
EM3
Full RAM retention and CRYO-
TIMER running from ULFRCO
—
2.7
—
μA
Current consumption in
EM4H Hibernate mode
I
EM4
128 byte RAM retention, RTCC
running from LFXO
—
1
—
μA
128 byte RAM retention, CRYO-
TIMER running from ULFRCO
—
0.62
—
μA
128 byte RAM retention, no RTCC
—
0.62
—
μA
Current consumption in
EM4S Shutoff mode
I
EM4S
No RAM retention, no RTCC
—
0.02
—
μA
Note:
1. CMU_HFXOCTRL_LOWPOWER=0
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SiP Module Data Sheet
Electrical Specifications
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