Rev. 2.0, 11/00, page 130 of 1037
7.2.4
Pin Configuration
The flash memory is controlled by means of the pins shown in table 7.2.
Table 7.2
Flash Memory Pins
Pin Name
Abbreviation
I/O
Function
Reset
5(6
Input
Reset
Flash write enable
FWE
Input
Flash program/erase protection by hardware
Mode 0
MD0
Input
Sets this LSI operating mode
Port 12
P12
Input
Sets this LSI operating mode when MD0 = 0
Port 13
P13
Input
Sets this LSI operating mode when MD0 = 0
Port 14
P14
Input
Sets this LSI operating mode when MD0 = 0
Transmit data
SO1
Output
Serial transmit data output
Receive data
SI1
Input
Serial receive data input
7.2.5
Register Configuration
The registers used to control the on-chip flash memory when enabled are shown in table 7.3.
In order to access these registers, the FLSHE bit in STCR must be set to 1.
Table 7.3
Flash Memory Registers
Register Name
Abbreviation
R/W
Initial
Value
Address
*
5
Access
Size
Flash memory control register 1
FLMCR1
*
4
R/W
*
1
H'00
*
2
H'FFF8
8
Flash memory control register 2
FLMCR2
*
4
R/W
*
1
H'00
*
3
H'FFF9
8
Erase block register 1
EBR1
*
4
R/W
*
1
H'00
*
3
H'FFFA
8
Erase block register 2
EBR2
*
4
R/W
*
1
H'00
*
3
H'FFFB
8
Serial timer control register
STCR
R/W
H'00
H'FFEE
8
Notes: 1. When the FWE bit in FLMCR1 is not set at 1, writes are disabled.
2. When a high level is input to the FWE pin, the initial value is H'80.
3. When a low level is input to the FWE pin, or if a high level is input and the SWE bit in
FLMCR1 is not set, these registers are initialized to H'00.
4. FLMCR1, FLMCR2, EBR1, and EBR2 are 8-bit registers. Only byte accesses are
valid for these registers, the access requiring 2 states.
5. Lower 16 bits of the address.
Содержание Hitachi H8S/2191
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