Renesas H8/38024 Series, Руководство по оборудованию

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Rev. 6.00, 08/04, page 175 of 628
6.10.3 Memory Read Mode
1. After completion of auto-program/auto-erase/status read operations, a transition is made to the
command wait state. When reading memory contents, a transition to memory read mode must
first be made with a command write, after which the memory contents are read. Once memory
read mode has been entered, consecutive reads can be performed.
2. In memory read mode, command writes can be performed in the same way as in the command
wait state.
3. After powering on, memory read mode is entered.
4. Tables 6.14 to 6.16 show the AC characteristics.
Table 6.14 AC Characteristics in Transition to Memory Read Mode
Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C
Item Symbol Min Max Unit Notes
Command write cycle t
nxtc
20 — µs Figure 6.13
CE
hold time t
ceh
0 — ns
CE
setup time t
ces
0 — ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Write pulse width t
wep
70 — ns
WE
rise time t
r
— 30 ns
WE
fall time t
f
— 30 ns
CE
OE
CE
A15
−
A0
OE
WE
I/O7
−
I/O0
Note: Data is latched on the rising edge of
WE
.
t
ceh
t
wep
t
f
t
r
t
ces
t
nxtc
Address stable
t
ds
t
dh
Command write Memory read mode
Figure 6.13 Timing Waveforms for Memory Read after Memory Write