64 KByte Flash Module (S12FTMRG64K4KV2)
MC9S12VRP Family Reference Manual Rev. 1.3
NXP Semiconductors
481
CAUTION
Field margin levels must only be used during verify of the initial factory
programming.
NOTE
Field margin levels can be used to check that Flash memory contents have
adequate margin for data retention at the normal level setting. If unexpected
results are encountered when checking Flash memory contents at field
margin levels, the Flash memory contents should be erased and
reprogrammed.
18.4.6.14 Erase Verify D-Flash Section Command
The Erase Verify D-Flash Section command will verify that a section of code in the D-Flash is erased. The
Erase Verify D-Flash Section command defines the starting point of the data to be verified and the number
of words.
Upon clearing CCIF to launch the Erase Verify D-Flash Section command, the Memory Controller will
verify the selected section of D-Flash memory is erased. The CCIF flag will set after the Erase Verify
D-Flash Section operation has completed. If the section is not erased, it means blank check failed, both
MGSTAT bits will be set.
Table 18-59. Set Field Margin Level Command Error Handling
Register
Error Bit
Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 001 at command launch
Set if command not available in current mode (see
)
Set if an invalid FlashBlockSelectionCode[1:0] is supplied (See
Set if an invalid margin level setting is supplied
FPVIOL
None
MGSTAT1
None
MGSTAT0
None
Table 18-60. Erase Verify D-Flash Section Command FCCOB Requirements
CCOBIX[2:0]
FCCOB Parameters
000
0x10
Global address [17:16] to
identify the D-Flash block
001
Global address [15:0] of the first word to be verified
010
Number of words to be verified
Содержание MC9S12VRP64
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Страница 424: ...LIN Physical Layer S12LINPHYV2 MC9S12VRP Family Reference Manual Rev 1 3 424 NXP Semiconductors ...
Страница 436: ...Supply Voltage Sensor BATSV2 MC9S12VRP Family Reference Manual Rev 1 3 436 NXP Semiconductors ...
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