Fuji Electric 6MBP15XSD060-50, Руководство по применению

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Fuji Electric Co., Ltd.
MT6M12343 Rev.1.0
Dec.-2016
1-7
Chapter 1 Product Outline
An example of the absolute maximum ratings of 6MBP20XSD060-50 is shown in Table 1-2.
Item Symbol Rating Unit Description
DC bus Voltage V
DC
450 V
DC voltage that can be applied between
P-N(U),N(V),N(W) terminals
Bus Voltage (Surge) V
DC(Surge)
500 V
Peak value of the surge voltage that can be
applied between P-N(U),N(V),N(W)
terminals during switching operation
Collector-Emitter Voltage V
CES
600 V
Maximum collector-emitter voltage of the
built-in IGBT chip and repeated peak
reverse voltage of the FWD chip
Collector Current I
C@25
20 A
Maximum collector current for the IGBT chip
T
c
=25

C, T
j
=150

C
Peak Collector Current I
CP@25
40 A
Maximum pulse collector current for the
IGBT chip
T
c
=25  C, T
j
=150  C
Diode Forward Current I
F@25
20 A
Maximum forward current for the FWD chip
T
c
=25

C, T
j
=150

C
Peak Diode Forward Current I
FP@25
40 A
Maximum pulse forward current for the
FWD chip
T
c
=25  C, T
j
=150  C
Collector Power Dissipation P
D_IGBT
41.0 W
Maximum power dissipation for one IGBT
element at
T
c
=25

C, T
j
=150

C
FWD Power Dissipation P
D_FWD
27.8 W
Maximum power dissipation for one FWD
element at
T
c
=25  C, T
j
=150  C
Maximum Junction Temperature
of Inverter Block
T
j(max)
+150

C
Maximum junction temperature of the IGBT
chips and the FWD chips
Operating Junction Temperature
of Inverter Block
T
jOP
-40 ~ +150  C
Junction temperature of the IGBT and FWD
chips during continuous operation
5. Absolute Maximum Ratings
Table 1-2 Absolute Maximum Ratings at Tj=25

C,Vcc=15V (unless otherwise specified)