Fuji Electric Co., Ltd.
MT6M12343 Rev.1.0
Dec.-2016
1-3
Chapter 1 Product Outline
FWD
IGBT
WIRE
IC
Mold resin
Lead frame
BSD
Aluminum base PCB with isolation layer
Mold resin
FWD
IGBT
WIRE
IC
Mold resin
Lead frame
BSD
Aluminum base PCB with isolation layer
Mold resin
Fig.1-2 Package overview
• The OC protection circuits protect the IGBT against over current, load short-circuit or arm short-circuit.
The protection circuit monitors the emitter current using external shunt resistor in each lower side IGBT
and thus it can protect the IGBT against arm short-circuit.
• The UV protection circuit is integrated into all of the IGBT drive circuits and control power supply. This
protection function is effective for a voltage drop of all of the high side drive circuits and the control
power supply.
• The OH protection circuit protects the IPM from overheating. The OH protection circuit is built into the
control IC of the lower side arm (LVIC).
• The temperature sensor output function enables to output measured temperature as an analog voltage
(built in LVIC)
• The FO function outputs a fault signal, making it possible to shut down the system reliably by outputting
the fault signal to a microprocessor unit which controls the IPM when the circuit detects abnormal
conditions.
1.3 Built-in protection circuits
• The following built-in protection circuits are incorporated in the IPM device:
(OC): Over current protection
(UV): Under voltage protection for power supplies of control IC
(LT) or (OH): Temperature sensor output function or Overheating protection
(FO): Fault alarm signal output
Fig.1-3 Package cross section diagram
1.4 Compact package
•The package of this product includes with an aluminum base, which further improves the heat radiation.
•The control input terminals have a shrink pitch of 1.778mm (70mil).
•The power terminals have a standard pitch of 2.54mm (100mil).
