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Fuji Electric Co., Ltd.

MT6M12343 Rev.1.0
Dec.-2016

Contents

Page

1. Precautions for use ............................................................................

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2. Precautions on storage ......................................................................

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3. Notice .................................................................................................

7-3

Chapter 7

Cautions

Содержание 6MBP15XSD060-50

Страница 1: ...i Electric Co Ltd MT6M12343 Rev 1 0 Dec 2016 Fuji Electric Co Ltd Dec 2016 Application Manual Small IPM Fuji IGBT Intelligent Power Module 6MBP15XS 060 50 6MBP20XS 060 50 6MBP30XS 060 50 6MBP35XS 060...

Страница 2: ...al BSDs Boot Strap Diodes 3 9 4 Input Terminals IN HU HV HW IN LU LV LW 3 13 5 Over Current Protection Input IS 3 16 6 Fault Status Output VFO 3 17 7 Linear Temperature Sensor Output TEMP 3 18 8 Over...

Страница 3: ...T6M12343 Rev 1 0 Dec 2016 1 1 Contents Page 1 Introduction 1 2 2 Product line up 1 4 3 Definition of type name and marking spec 1 5 4 Package outline dimensions 1 6 5 Absolute maximum ratings 1 7 Chap...

Страница 4: ...and switching loss 1 2 Built in drive circuit Drives the IGBT under optimal conditions The control IC of upper side arms have a built in high voltage level shift circuit HVIC This IPM is possible for...

Страница 5: ...s the IPM from overheating The OH protection circuit is built into the control IC of the lower side arm LVIC The temperature sensor output function enables to output measured temperature as an analog...

Страница 6: ...500Vrms Sinusoidal 60Hz 1min Between shorted all terminals and case LT 1 Room air conditioner compressor drive Heat pump applications Fan motor drive General motor drive Servo drive 6MBP15XSF060 50 LT...

Страница 7: ...fication Type name 6 MBP 20 X S D 060 50 Additional model number Option 50 RoHS Voltage rating 060 600V Additional number of series D Temperature sensor output F Temperature sensor output and Over hea...

Страница 8: ...2 0 1 14 0 14 7 29 4 0 5 0 5 0 5 1 8 1 5 3 7 0 1 0 1 0 40 10 6 0 1 1 8 0 1 2 5 min 1 2 0 6 8 96 15 56 3 5 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28 30 32 36 0 1 0 98 min Note 1 The IMS I...

Страница 9: ...Collector Current ICP 25 40 A Maximum pulse collector current for the IGBT chip Tc 25 C Tj 150 C Diode Forward Current IF 25 20 A Maximum forward current for the FWD chip Tc 25 C Tj 150 C Peak Diode F...

Страница 10: ...rrent IIN 3 mA Maximum input current that flows from IN terminal to COM Fault Signal Voltage VFO 0 5 VCCL 0 5 V Voltage that can be applied between COM and VFO terminal Fault Signal Current IFO 1 mA S...

Страница 11: ...the absolute maximum rating of IGBT Collector Emitter voltage And VDC Surge is specified considering the margin of the surge voltage which is generated by the wiring inductance in this IPM Furthermor...

Страница 12: ...Fuji Electric Co Ltd 2 1 MT6M12343 Rev 1 0 Dec 2016 Contents Page 1 Description of Terminal Symbols 2 2 2 Description of Terminology 2 3 Chapter 2 Description of Terminal Symbols and Terminology...

Страница 13: ...phase 12 VCCH High side control supply 13 COM Common supply ground 14 IN LU Signal input for low side U phase 15 IN LV Signal input for low side V phase 16 IN LW Signal input for low side W phase 17...

Страница 14: ...delay td off The time from the input signal dropping below the threshold value until the collector current decreases to 90 See Fig 2 1 Turn on fall time tf The time from the collector current becoming...

Страница 15: ...n hysteresis TOH hys Hysteresis temperature required for output stop resetting after protection operation See Fig 2 2 and refer chapter 3 section 8 TOH and TOH hys are applied to the overheating prote...

Страница 16: ...istance between the case and heat sink when mounted on a heat sink at the recommended torque using the thermal compound 3 BSD block 5 Mechanical Characteristics Item Symbol Description Tighten torque...

Страница 17: ...rminology Fig 2 2 The measurement position of temperature sensor and Tc Fig 2 3 The measurement point of heat sink side flatness Approx 4 5 Approx 0 7 Approx 7 0 TOP VIEW SIDE VIEW Heat sink side Tc m...

Страница 18: ...of High Side VB U V W 3 6 3 Function of Internal BSDs Boot Strap Diodes 3 9 4 Input Terminals IN HU HV HW IN LU LV LW 3 13 5 Over Current Protection Input Terminal IS 3 16 6 Fault Status Output Termi...

Страница 19: ...ation Table 3 1 describes the behavior of the IPM for various control supply voltages A low impedance capacitor and a high frequency decoupling capacitor should be connected close to the terminals of...

Страница 20: ...OM terminals The diode is connected to protect the IPM from the input surge voltage Don t use the diode for voltage clamp purpose otherwise the IPM might be damaged Fig 3 1 Control supply of high and...

Страница 21: ...h of the fault output signal is 20 s and all lower side IGBTs are OFF state regardless of the input signal condition 3 UV is reset after tFO and VCCL exceeding VCCL ON then the fault output VFO is res...

Страница 22: ...onstant high level regardless VCCH 2 After VCCH falls below VCCH OFF the upper side IGBT remains OFF state But the fault output VFO keeps high level 3 The HVIC starts to operate from the next input si...

Страница 23: ...be well filtered with a low impedance capacitor and a high frequency decoupling capacitor connected close to the terminals in order to prevent malfunction of the internal control IC caused by a high...

Страница 24: ...rically connected to the VB U V W U V W and COM terminals These diodes protect the IPM from an input surge voltage Don t use these diodes for a voltage clamp because the IPM might be destroyed if the...

Страница 25: ...ds VB ON the HVIC starts to operate from the next input signal The fault output VFO is constant high level regardless VB 2 After VB falls below VB OFF the upper side IGBT remains OFF state But the fau...

Страница 26: ...C t1 VCC Steady state VF Forward voltage of Boost strap diode D VCE sat Saturation voltage of lower side IGBT R Bootstrap resistance for inrush current limitation R Ib Charge current of bootstrap When...

Страница 27: ...nrush current limitation R Ib Charge current of bootstrap When both the lower side IGBT and the upper side IGBT are OFF a regenerative current flows continuously through the freewheel path of the lowe...

Страница 28: ...the lower side IGBT should be basically determined such that the time constant C R will enable the discharged voltage dV to be fully charged again during the ON period However if the control mode only...

Страница 29: ...make a full charge of the bootstrap capacitor For reference the charging time of 10 F capacitor through the internal bootstrap diode is about 2ms Main Bus voltage V P N ON HVICs and LVIC supply voltag...

Страница 30: ...resistance against the charging voltage is shown in Fig 3 14 1 5 10 15 20 1 10 100 1000 125 c 25 c Built in equivalent series resistance Rs Forward Voltage VF V 40 c Typical BSD Built in limiting res...

Страница 31: ...ectly to the MPU It should not need the external pull up and down resistors connected to the input terminals input logic is active high and the pull down resistors are built in The RC coupling at each...

Страница 32: ...r Therefore when using an external filtering resistor between the MPU output and input of the IPM please consider the signal voltage drop at the input terminals to satisfy the turn on threshold voltag...

Страница 33: ...IGBT drive state versus ON pulse width of Control signal state A IGBT may turn on occasionally even when the ON pulse width of control signal is less than minimum tIN ON Also if the ON pulse width of...

Страница 34: ...O is activated and all lower side IGBT shut down simultaneously after the over current protection delay time td IS Inherently there is dead time of LVIC in td IS t4 After the fault output pulse width...

Страница 35: ...the MPU and the inrush current limitation resistance R1 which is more than 5k should be connected between the MPU and the VFO terminal These signal lines should be wired as short as possible Fault st...

Страница 36: ...rically connected between TEMP and COM terminal as shown in Fig 3 12 The purpose of the diode is a protection of the IPM from an input surge voltage Don t use the diode as a voltage clamp circuit beca...

Страница 37: ...terminal voltage is the same as the clamp voltage t2 t3 TEMP terminal voltage rises to the voltage determined by LVIC temperature In case the temperature is clamping operation the TEMP terminal volta...

Страница 38: ...e IGBTs when the LVIC temperature exceeds TOH The fault status is reset when the LVIC temperature drops below TOH TOH hys t1 The fault status is activated and all IGBTs of the lower side arm shut down...

Страница 39: ...lectric Co Ltd 4 1 MT6M12343 Rev 1 0 Dec 2016 Contents Page 1 Connection of Bus Input terminal and Low Side Emitters 4 2 2 Setting of Shunt Resistor of Over Current Protection 4 3 Chapter 4 Power Term...

Страница 40: ...to detect OC over current condition or phase currents A long wiring patterns between the shunt resistor and the IPM will cause excessive surge that might damage internal IC and current detection compo...

Страница 41: ...hosen considering OC level required in practical application 4 2 2 Filter delay time setting of over current protection An external RC filter is necessary in the over current sensing circuit to preven...

Страница 42: ...5 1 Fuji Electric Co Ltd MT6M12343 Rev 1 0 Dec 2016 Contents Page 1 Examples of Application Circuits 5 2 2 Recommendation and Precautions in PCB design 5 5 Chapter 5 Recommended wiring and layout...

Страница 43: ...tion tips and precautions in PCB design are described with example of application circuit Fig 5 1 and Fig 5 2 show examples of application circuits and their notes In these figures although two types...

Страница 44: ...HW VB V VB W TEMP NC VB 7 TEMP Vcc IN GND OUT Vs VB Vcc IN GND OUT Vs VB 3 HVIC LVIC 3 BSD 6 IGBT 6 FWD D1 D1 D1 A C C C B B B Long GND wiring here might generate noise to input and cause IGBT malfunc...

Страница 45: ...same level as the IPM OC trip reference voltage VIS ref 7 Please use high speed type comparator and logic IC to detect OC condition quickly 8 If negative voltage is applied to R1 during switching oper...

Страница 46: ...ote The input signals are represented with IN HU 1 Overall design around the IPM A Keep a relevant creepage distance at the boundary Place a slit between there if needed B The pattern of the power inp...

Страница 47: ...le A B B C D E Fig 5 4 Image of recommended PCB layout Power input part 3 Power supply for high side drive part A The pattern between VB U VB V VB W and the electronic components ceramic capacitor ele...

Страница 48: ...is used please take into account the internal pull down resistors in this IPM and confirm the signal level in the actual system Fig 5 6 Image of recommended PCB layout Interface part E B A D C note T...

Страница 49: ...t as possible to avoid OC level fluctuation and malfunction C In order to prevent false detection during switching operation it is recommended to connect a RC filter to the IS terminal The negative po...

Страница 50: ...Fuji Electric Co Ltd 6 1 MT6M12343 Rev 1 0 Dec 2016 Contents Page 1 Soldering to PCB 6 2 2 Mounting to Heat sink 6 3 3 Cooler Heat Sink Selection 6 4 Chapter 6 Mounting Guideline and Thermal Design...

Страница 51: ...inal should be more than 1 5mm apart from the device When using flow soldering be careful to avoid immersing the package in the solder bath 3 It is not recommended to reuse the device after it is remo...

Страница 52: ...2 0 5 0 5 3 5 7 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28 30 32 36 37 38 39 40 0 1 Fig 6 2 shows the measurement position of heat sink flatness The heat sink flatness should be from 0 m 10...

Страница 53: ...higher than Tj max it might cause damage to the chips The over heating OH protection function works when the IGBT junction temperature exceeds Tj max However if the temperature rises too quickly the...

Страница 54: ...7 1 Fuji Electric Co Ltd MT6M12343 Rev 1 0 Dec 2016 Contents Page 1 Precautions for use 7 2 2 Precautions on storage 7 2 3 Notice 7 3 Chapter 7 Cautions...

Страница 55: ...igher than the threshold voltage Use this IPM within their reliability and lifetime under certain environments or conditions This IPM may fail before the target lifetime of your products if used under...

Страница 56: ...anges in temperature to avoid condensation on the surface of the IPM Therefore store the IPM in a place where the temperature is steady The IPM should not be stored on top of each other since this may...

Страница 57: ...for Room Air Conditioner Inverter for Compressor motor for heat pump applications 5 If you need to use a semiconductor product in this application note for equipment requiring higher reliability than...

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