GR740-UM-DS, Nov 2017, Version 1.7
474
www.cobham.com/gaisler
GR740
AE10
MEM_ADDR[8]
O
LVCMOS
3.3
-
SDRAM
AE11
MEM_ADDR[12]
O
LVCMOS
3.3
-
SDRAM
AE12
MEM_BA[1]
O
LVCMOS
3.3
-
SDRAM
AE13
MEM_CKE[0]
O
LVCMOS
3.3
-
High
SDRAM
AE14
MEM_DQ[48]
IO
LVCMOS
3.3
-
SDRAM
AE15
MEM_DQ[54]
IO
LVCMOS
3.3
-
SDRAM
AE16
MEM_DQ[58]
IO
LVCMOS
3.3
-
SDRAM
AE17
MEM_DQ[62]
IO
LVCMOS
3.3
-
SDRAM
AE18
MEM_DQ[66]
IO
LVCMOS
3.3
-
SDRAM
AE19
MEM_DQ[70]
IO
LVCMOS
3.3
-
SDRAM
AE20
MEM_DQ[72]
IO
LVCMOS
3.3
-
SDRAM
AE21
MEM_DQ[76]
IO
LVCMOS
3.3
-
SDRAM
AE22
MEM_DQ[80]
IO
LVCMOS
3.3
-
SDRAM
AE23
MEM_DQ[83]
IO
LVCMOS
3.3
-
SDRAM
AE24
GND
Power/ground pin
GND
AE25
GND
Power/ground pin
GND
Table 597.
Pin assignment
Position
Signal Name
I/O
Level
Volt.
[V] Pull
Polarity
Note