GR740-UM-DS, Nov 2017, Version 1.7
461
www.cobham.com/gaisler
GR740
B15
JTAG_TDO
O
LVCMOS
3.3
-
JTAG
B16
JTAG_TDI
I
LVCMOS
3.3
-
JTAG
B17
GPIO[7]
IO
LVCMOS
3.3
-
GPIO
B18
GPIO[10]
IO
LVCMOS
3.3
-
GPIO
B19
GPIO[6]
IO
LVCMOS
3.3
-
GPIO
B20
GPIO[2]
IO
LVCMOS
3.3
-
GPIO
B21
PCIMODE_ENABLE
I
LVCMOS
3.3
-
High
Bootstrap
B22
PLL_BYPASS[1]
I
LVCMOS
3.3
-
High
Bootstrap
B23
PLL_IGNLOCK
I
LVCMOS
3.3
-
High
Bootstrap
B24
PLL_LOCKED[4]
O
LVCMOS
3.3
-
High
Bootstrap
B25
GND
Power/ground pin
GND
C1
PROMIO_ADDR[10]
O
LVCMOS
3.3
-
PROM
C2
PROMIO_ADDR[12]
O
LVCMOS
3.3
-
PROM
C3
PROMIO_ADDR[7]
O
LVCMOS
3.3
-
PROM
C4
PROMIO_ADDR[3]
O
LVCMOS
3.3
-
PROM
C5
PROMIO_OEN
O
LVCMOS
3.3
-
Low
PROM
C6
PROMIO_DATA[15]
IO
LVCMOS
3.3
-
PROM
C7
PROMIO_DATA[9]
IO
LVCMOS
3.3
-
PROM
C8
PROMIO_DATA[5]
IO
LVCMOS
3.3
-
PROM
C9
PROMIO_DATA[0]
IO
LVCMOS
3.3
-
PROM
C10
GR1553_BUSBTXIN
O
LVCMOS
3.3
-
High
MIL-1553
C11
SPI_SCK
IO
LVCMOS
3.3
-
SPI
C12
SPI_SEL
I
LVCMOS
3.3
-
Low
SPI
C13
SPI_SLVSEL[0]
O
LVCMOS
3.3
-
Low
SPI
C14
SPI_SLVSEL[1]
O
LVCMOS
3.3
-
Low
SPI
C15
GPIO[13]
IO
LVCMOS
3.3
-
GPIO
C16
GPIO[9]
IO
LVCMOS
3.3
-
GPIO
C17
GPIO[3]
IO
LVCMOS
3.3
-
GPIO
C18
GPIO[1]
IO
LVCMOS
3.3
-
GPIO
C19
DSU_ACTIVE
O
LVCMOS
3.3
-
High
Bootstrap
C20
MEM_IFWIDTH
I
LVCMOS
3.3
-
Bootstrap
C21
VSS2V5
Power/ground pin
VSS2V5
C22
VSS2V5
Power/ground pin
VSS2V5
C23
VSS2V5
Power/ground pin
VSS2V5
C24
VSS2V5
Power/ground pin
VSS2V5
C25
VSS2V5
Power/ground pin
VSS2V5
D1
PROMIO_ADDR[14]
O
LVCMOS
3.3
-
PROM
D2
PROMIO_ADDR[16]
IO
LVCMOS
3.3
-
PROM
D3
PROMIO_ADDR[11]
O
LVCMOS
3.3
-
PROM
D4
PROMIO_ADDR[5]
O
LVCMOS
3.3
-
PROM
D5
PROMIO_BRDYN
I
LVCMOS
3.3
-
Low
PROM
D6
PROMIO_DATA[13]
IO
LVCMOS
3.3
-
PROM
D7
PROMIO_DATA[11]
IO
LVCMOS
3.3
-
PROM
D8
PROMIO_DATA[3]
IO
LVCMOS
3.3
-
PROM
Table 597.
Pin assignment
Position
Signal Name
I/O
Level
Volt.
[V] Pull
Polarity
Note