GR740-UM-DS, Nov 2017, Version 1.7
439
www.cobham.com/gaisler
GR740
39.3
Input and output signal DC characteristics
DC electrical I/O characteristics presented by the device, assuming the device is operating under to
the recommended DC operating conditions, are provided below.
1)
The outputs can be digitally reprogrammed to reduce the drive strength
2)
Internal termination is provided on all LVDS inputs
3)
Guaranteed by design, not production tested
39.4
Power supplies
The device has the following power domains:
The different grounds are provided for PCB design / power integrity purposes, all grounds supplied to
the device must be connected and at the same DC potential.
39.4.1 Power sequence
This section is provided as a design guideline.
Table 575.
Input and output DC characteristics
Parameter
Symbol
Conditions
Minimum
Typical
Maximum
Unit
Input leakage current
(LVCMOS)
I
leak
-10
10
uA
Input capacitance
(LVCMOS)
C
in
At package pin
35
pF
Schmitt-trigger hyster-
esis for LVCMOS
inputs
V
hyst
50
3)
300
mV
LVCMOS Output high
voltage
V
oh
10mA load,
default setting
1)
VDIG33-
0.4
VDIG33
V
LVCMOS Output low
voltage
V
ol
-10mA load,
default setting
1)
0.0
0.4
V
LVDS input resis-
tance
2)
R
I,LVDS
80
100
120
Ohm
LVDS output common
mode voltage
V
OCM,LVDS
1.050
1.200
1.350
V
LVDS output differ-
ence
V
ODIFF,LVD
S
100 Ohm termina-
tion
0.247
0.400
V
Table 576.
Power domains
Name
Description
Voltage (V)
Notes
VDD12
Digital core supply
1.2
GND
Digital core ground
0
VDDPLLA
Analog PLL supply
1.2
VSSPLLA
Analog PLL ground
0
VDDPLLD
Digital PLL supply
1.2
VSSPLLD
Digital PLL ground
0
VDIG33
I/O bank supply
3.3
VSS33
I/O bank ground
0
VDIG25
I/O bank supply
2.5
Used for LVDS IOs
VSS25
I/O bank ground
0