Minimum
Typical
Maximum
Duration of OFF state
100 ms
Switch-on delay
3 × response
time
ON state, switching voltage HIGH
(U
rms
)
2)
U
V
– 2.25 V
24 V
U
V
OFF state, switching voltage LOW
2)
3)
0 V
0 V
2.0 V
Current-carrying capacity of the
OSSDs
500 mA each
Leakage current of the OSSDs
2 mA each
Load capacity
2.2 µF
Load inductance
2.2 H
Test pulse data
4)
Test pulse width
150 µs
300 µs
Test pulse rate
3 s
-1
5 s
-1
10 s
-1
Discrepancy time (time offset
between switching of OSSD2 and
OSSD1)
1 ms
Inputs
Input voltage HIGH (active)
2)
11 V
24 V
30 V
Input current HIGH
6 mA
10 mA
20 mA
Input voltage LOW (deactivated)
2)
–3 V
0 V
5 V
Input current LOW
-2.5 mA
0 mA
0.5 mA
External device monitoring input (EDM)
Connected contactors
Permissible dropout time
300 ms
Permissible pull in time
300 ms
Reset pushbutton input (RES)
Control switch actuation time
50 ms
Muting signal 1 and muting signal 2 inputs (In1, In2, In4)
Input filter
50 ms
Muting sensors
Output type
PNP switching
Current consumption of a muting
sensor
50 mA
Supply voltage
U
v
– 1 V
U
v
Application diagnostic output (ADO)
PNP semiconductor, short-circuit protected
1)
Output voltage HIGH (active)
U
V
– 3 V
Output voltage LOW (deactivated)
High resistance
Output current HIGH (active)
100 mA
Permissible cable resistance
5)
Supply cable
6)
7)
1 Ω
8)
Cable between host and guest
1 Ω
Cable between OSSD and load
2.5 Ω
TECHNICAL DATA
13
8021645/1EB0/2022-04-28 | SICK
O P E R A T I N G I N S T R U C T I O N S | deTec4
143
Subject to change without notice
