FEDL22620-01
ML22620
●
Setting timing of playback phrases by FADR2 command
●
Playback start timing by PLAY2 command
When the first byte of the PLAY command is input, the 2nd byte waits for input after the command processing time (t
CB1
),
and when the 2nd byte is input, the 3rd byte waits for input after the command processing time (t
CB1
). When the third byte is
entered, the address data of the phrase to be played after the command processing time (t
CB2
) is read from the flash memory.
When the phrase address data is read, the specified phrase is played back, and when playback is completed, the BUSYB
signal of the playback channel becomes "H" level.
The NCR signal goes to the "L" level during playback preparation, and goes to the "H" level when playback preparation is
completed and playback starts. When the NCR signal of the playback channel becomes "H" level, the PLAY command of the
next phrase to be played can be accepted.
*1 The length of the "L" interval in the BUSYBn is (tCB2+ sound production time).
CSB
Status
Command is being processed
SCK
SI
NCRn
BUSYBn
Awaiting command
Awaiting command
FADR2 command
1
st
byte
FADR2 command
3
rd
byte
(internal)
(internal)
VOH
VOL
CBUSYB
Awaiting command
Command is being processed
FADR2 command
2
nd
byte
Awaiting command
t
CB1
t
CB1
t
CB1
Command is being processed
CSB
Status
Command is being processed
Playing
SCK
SI
NCRn
BUSYBn
Awaiting command
SPM
1/2VDD
SPP
1/2VDD
Address is being
controlled
Awaiting command
Awaiting command
*1
PLAY2 command
1
st
byte
PLAY2 command
3
rd
byte
(internal)
(internal)
VOH
VOL
CBUSYB
t
CB1
Awaiting command
Command is being processed
PLAY2 command
2
nd
byte
t
CB2
t
CB1
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Summary of Contents for LAPIS Semiconductor ML22620
Page 106: ...FEDL22620 01 ML22620 106 115...
